Electron focusing with a double grid in AlGaAs/GaAs heterostructures

K. Nakazato, R. I. Hornsey, R. J. Blaikie, J. R.A. Cleaver, H. Ahmed, T. J. Thornton

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.

Original languageEnglish (US)
Pages (from-to)1093-1095
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number9
DOIs
StatePublished - Dec 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nakazato, K., Hornsey, R. I., Blaikie, R. J., Cleaver, J. R. A., Ahmed, H., & Thornton, T. J. (1992). Electron focusing with a double grid in AlGaAs/GaAs heterostructures. Applied Physics Letters, 60(9), 1093-1095. https://doi.org/10.1063/1.106454