Electron focusing with a double grid in AlGaAs/GaAs heterostructures

K. Nakazato, R. I. Hornsey, R. J. Blaikie, J. R A Cleaver, H. Ahmed, Trevor Thornton

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.

Original languageEnglish (US)
Pages (from-to)1093-1095
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number9
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

aluminum gallium arsenides
grids
electron trajectories
electrons
scattering
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nakazato, K., Hornsey, R. I., Blaikie, R. J., Cleaver, J. R. A., Ahmed, H., & Thornton, T. (1992). Electron focusing with a double grid in AlGaAs/GaAs heterostructures. Applied Physics Letters, 60(9), 1093-1095. https://doi.org/10.1063/1.106454

Electron focusing with a double grid in AlGaAs/GaAs heterostructures. / Nakazato, K.; Hornsey, R. I.; Blaikie, R. J.; Cleaver, J. R A; Ahmed, H.; Thornton, Trevor.

In: Applied Physics Letters, Vol. 60, No. 9, 1992, p. 1093-1095.

Research output: Contribution to journalArticle

Nakazato, K, Hornsey, RI, Blaikie, RJ, Cleaver, JRA, Ahmed, H & Thornton, T 1992, 'Electron focusing with a double grid in AlGaAs/GaAs heterostructures', Applied Physics Letters, vol. 60, no. 9, pp. 1093-1095. https://doi.org/10.1063/1.106454
Nakazato, K. ; Hornsey, R. I. ; Blaikie, R. J. ; Cleaver, J. R A ; Ahmed, H. ; Thornton, Trevor. / Electron focusing with a double grid in AlGaAs/GaAs heterostructures. In: Applied Physics Letters. 1992 ; Vol. 60, No. 9. pp. 1093-1095.
@article{e912f279aa324f5d87a7b0c93f326923,
title = "Electron focusing with a double grid in AlGaAs/GaAs heterostructures",
abstract = "Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.",
author = "K. Nakazato and Hornsey, {R. I.} and Blaikie, {R. J.} and Cleaver, {J. R A} and H. Ahmed and Trevor Thornton",
year = "1992",
doi = "10.1063/1.106454",
language = "English (US)",
volume = "60",
pages = "1093--1095",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Electron focusing with a double grid in AlGaAs/GaAs heterostructures

AU - Nakazato, K.

AU - Hornsey, R. I.

AU - Blaikie, R. J.

AU - Cleaver, J. R A

AU - Ahmed, H.

AU - Thornton, Trevor

PY - 1992

Y1 - 1992

N2 - Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.

AB - Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.

UR - http://www.scopus.com/inward/record.url?scp=0009049728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009049728&partnerID=8YFLogxK

U2 - 10.1063/1.106454

DO - 10.1063/1.106454

M3 - Article

AN - SCOPUS:0009049728

VL - 60

SP - 1093

EP - 1095

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -