Electron emission properties of crystalline diamond and III-nitride surfaces

Robert Nemanich, P. K. Baumann, M. C. Benjamin, O. H. Nam, A. T. Sowers, B. L. Ward, H. Ade, R. F. Davis

Research output: Contribution to journalArticle

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Abstract

Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect. Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has been established for epitaxial AlN and AlGaN on 6H-SiC. Field emission measurements from flat surfaces of p-type diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field emission results indicate emission from the AlN conduction band. We also report PEEM (photo-electron emission microscopy) and FEEM (field electron emission microscopy) images of an array of nitride emitters.

Original languageEnglish (US)
Pages (from-to)694-703
Number of pages10
JournalApplied Surface Science
Volume130-132
DOIs
StatePublished - Jun 1998
Externally publishedYes

Fingerprint

negative electron affinity
Electron affinity
Diamond
Electron emission
Nitrides
electron emission
nitrides
field emission
Diamonds
diamonds
Field emission
Crystalline materials
Conduction bands
Microscopic examination
conduction bands
microscopy
Adsorbates
Photoelectron spectroscopy
Valence bands
Ultraviolet spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Nemanich, R., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., ... Davis, R. F. (1998). Electron emission properties of crystalline diamond and III-nitride surfaces. Applied Surface Science, 130-132, 694-703. https://doi.org/10.1016/S0169-4332(98)00140-8

Electron emission properties of crystalline diamond and III-nitride surfaces. / Nemanich, Robert; Baumann, P. K.; Benjamin, M. C.; Nam, O. H.; Sowers, A. T.; Ward, B. L.; Ade, H.; Davis, R. F.

In: Applied Surface Science, Vol. 130-132, 06.1998, p. 694-703.

Research output: Contribution to journalArticle

Nemanich, R, Baumann, PK, Benjamin, MC, Nam, OH, Sowers, AT, Ward, BL, Ade, H & Davis, RF 1998, 'Electron emission properties of crystalline diamond and III-nitride surfaces', Applied Surface Science, vol. 130-132, pp. 694-703. https://doi.org/10.1016/S0169-4332(98)00140-8
Nemanich, Robert ; Baumann, P. K. ; Benjamin, M. C. ; Nam, O. H. ; Sowers, A. T. ; Ward, B. L. ; Ade, H. ; Davis, R. F. / Electron emission properties of crystalline diamond and III-nitride surfaces. In: Applied Surface Science. 1998 ; Vol. 130-132. pp. 694-703.
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AU - Benjamin, M. C.

AU - Nam, O. H.

AU - Sowers, A. T.

AU - Ward, B. L.

AU - Ade, H.

AU - Davis, R. F.

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