Electron emission properties of crystalline diamond and III-nitride surfaces

R. J. Nemanich; P. K. Baumann; M. C. Benjamin; O. H. Nam; A. T. Sowers; B. L. Ward; H. Ade; R. F. Davis

doi:10.1016/S0169-4332(98)00140-8

Electron emission properties of crystalline diamond and III-nitride surfaces

R. J. Nemanich, P. K. Baumann, M. C. Benjamin, O. H. Nam, A. T. Sowers, B. L. Ward, H. Ade, R. F. Davis

Research output: Contribution to journal › Conference article › peer-review

42 Scopus citations

Abstract

Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect. Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has been established for epitaxial AlN and AlGaN on 6H-SiC. Field emission measurements from flat surfaces of p-type diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field emission results indicate emission from the AlN conduction band. We also report PEEM (photo-electron emission microscopy) and FEEM (field electron emission microscopy) images of an array of nitride emitters.

Original language	English (US)
Pages (from-to)	694-703
Number of pages	10
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00140-8
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: Oct 27 1997 → Oct 30 1997

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{ecbde50cf0154bb6b137f2d36a62efec,

title = "Electron emission properties of crystalline diamond and III-nitride surfaces",

abstract = "Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect. Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has been established for epitaxial AlN and AlGaN on 6H-SiC. Field emission measurements from flat surfaces of p-type diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field emission results indicate emission from the AlN conduction band. We also report PEEM (photo-electron emission microscopy) and FEEM (field electron emission microscopy) images of an array of nitride emitters.",

author = "Nemanich, {R. J.} and Baumann, {P. K.} and Benjamin, {M. C.} and Nam, {O. H.} and Sowers, {A. T.} and Ward, {B. L.} and H. Ade and Davis, {R. F.}",

note = "Funding Information: We gratefully acknowledge the support of the Office of Naval Research.; Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

year = "1998",

doi = "10.1016/S0169-4332(98)00140-8",

language = "English (US)",

volume = "130-132",

pages = "694--703",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Electron emission properties of crystalline diamond and III-nitride surfaces

AU - Nemanich, R. J.

AU - Baumann, P. K.

AU - Benjamin, M. C.

AU - Nam, O. H.

AU - Sowers, A. T.

AU - Ward, B. L.

AU - Ade, H.

AU - Davis, R. F.

N1 - Funding Information: We gratefully acknowledge the support of the Office of Naval Research.

PY - 1998

Y1 - 1998

N2 - Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect. Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has been established for epitaxial AlN and AlGaN on 6H-SiC. Field emission measurements from flat surfaces of p-type diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field emission results indicate emission from the AlN conduction band. We also report PEEM (photo-electron emission microscopy) and FEEM (field electron emission microscopy) images of an array of nitride emitters.

AB - Wide bandgap semiconductors have the possibility of exhibiting a negative electron affinity (NEA) meaning that electrons in the conduction band are not bound by the surface. The surface conditions are shown to be of critical importance in obtaining a negative electron affinity. UV-photoelectron spectroscopy can be used to distinguish and explore the effect. Surface terminations of molecular adsorbates and metals are shown to induce an NEA on diamond. Furthermore, a NEA has been established for epitaxial AlN and AlGaN on 6H-SiC. Field emission measurements from flat surfaces of p-type diamond and AlN are similar, but it is shown that the mechanisms may be quite different. The measurements support the recent suggestions that field emission from p-type diamond originates from the valence band while for AlN on SiC, the field emission results indicate emission from the AlN conduction band. We also report PEEM (photo-electron emission microscopy) and FEEM (field electron emission microscopy) images of an array of nitride emitters.

UR - http://www.scopus.com/inward/record.url?scp=0032096671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032096671&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(98)00140-8

DO - 10.1016/S0169-4332(98)00140-8

M3 - Conference article

AN - SCOPUS:0032096671

SN - 0169-4332

VL - 130-132

SP - 694

EP - 703

JO - Applied Surface Science

JF - Applied Surface Science

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Electron emission properties of crystalline diamond and III-nitride surfaces

Abstract

ASJC Scopus subject areas

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