Electron emission from metal-diamond (100), (111) and (110) interfaces

P. K. Baumann, R. J. Nemanich

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

Electron emission characteristics of Cu, Co or Zr films on diamond (100), (111) and (110) surfaces were measured by employing ultraviolet photoemission spectroscopy (UPS) and field emission measurements. Prior to metal deposition, the diamond substrates were terminated with oxygen, hydrogen or were free of adsorbates. Deposition of thin Cu or Co films induced a NEA on clean and H-terminated surfaces. A positive electron affinity was observed for Cu or Co on oxygenated surfaces, and depositing thin Zr films resulted in a NEA on all surfaces considered. UPS can be used to correlate the electron affinity and Schottky barrier height. Schottky barriers of metals on clean surfaces were the lowest, whereas they were the highest on oxygen-covered surfaces. Values for the Schottky barrier height ranged from 0.70 eV to 1.60 eV for Cu, 0.35 eV to 1.40 eV for Co and 0.70 eV to 0.95 eV for Zr. A field emission threshold of 79 V μm-1 was measured for oxygenated (100) surfaces. The lowest value of 20 V μ-1 was observed for Zr on the clean (100) surface. For all the metals studied, it was found that a lower Schottky barrier height results in a lower electron affinity, and a lower electron affinity results in a lower field emission threshold.

Original languageEnglish (US)
Pages (from-to)612-619
Number of pages8
JournalDiamond and Related Materials
Volume7
Issue number2-5
StatePublished - Feb 1 1998
Externally publishedYes

Keywords

  • Electron affinity
  • Electron emission
  • Metal-diamond interface
  • Schottky barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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