Electron emission from etched diamond and its structural analysis

M. Park, W. B. Choi, D. R. McGregor, L. Bergman, Robert Nemanich, J. J. Hren, J. J. Cuomo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages271-272
Number of pages2
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: Jul 19 1998Jul 24 1998

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period7/19/987/24/98

Fingerprint

diamond films
structural analysis
electron emission
field emission
diamonds
emitters
Raman spectroscopy
infrared spectroscopy
argon
etching
vapor deposition
microwaves
silicon
ions

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Park, M., Choi, W. B., McGregor, D. R., Bergman, L., Nemanich, R., Hren, J. J., & Cuomo, J. J. (1998). Electron emission from etched diamond and its structural analysis. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 271-272). Piscataway, NJ, United States: IEEE.

Electron emission from etched diamond and its structural analysis. / Park, M.; Choi, W. B.; McGregor, D. R.; Bergman, L.; Nemanich, Robert; Hren, J. J.; Cuomo, J. J.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1998. p. 271-272.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, M, Choi, WB, McGregor, DR, Bergman, L, Nemanich, R, Hren, JJ & Cuomo, JJ 1998, Electron emission from etched diamond and its structural analysis. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 271-272, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.
Park M, Choi WB, McGregor DR, Bergman L, Nemanich R, Hren JJ et al. Electron emission from etched diamond and its structural analysis. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1998. p. 271-272
Park, M. ; Choi, W. B. ; McGregor, D. R. ; Bergman, L. ; Nemanich, Robert ; Hren, J. J. ; Cuomo, J. J. / Electron emission from etched diamond and its structural analysis. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1998. pp. 271-272
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abstract = "Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.",
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AU - Hren, J. J.

AU - Cuomo, J. J.

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