Electron emission from etched diamond and its structural analysis

M. Park; W. B. Choi; D. R. McGregor; L. Bergman; Robert Nemanich; J. J. Hren; J. J. Cuomo

Electron emission from etched diamond and its structural analysis

M. Park, W. B. Choi, D. R. McGregor, L. Bergman, Robert Nemanich, J. J. Hren, J. J. Cuomo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	271-272
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Other

Other	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	7/19/98 → 7/24/98

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

Park, M, Choi, WB, McGregor, DR, Bergman, L, Nemanich, R, Hren, JJ & Cuomo, JJ 1998, Electron emission from etched diamond and its structural analysis. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 271-272, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.

@inproceedings{818b2807b3b14ec89a30000a087b1a1d,

title = "Electron emission from etched diamond and its structural analysis",

abstract = "Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.",

author = "M. Park and Choi, {W. B.} and McGregor, {D. R.} and L. Bergman and Robert Nemanich and Hren, {J. J.} and Cuomo, {J. J.}",

year = "1998",

language = "English (US)",

pages = "271--272",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - GEN

T1 - Electron emission from etched diamond and its structural analysis

AU - Park, M.

AU - Choi, W. B.

AU - McGregor, D. R.

AU - Bergman, L.

AU - Nemanich, Robert

AU - Hren, J. J.

AU - Cuomo, J. J.

PY - 1998

Y1 - 1998

N2 - Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.

AB - Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032307375&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032307375&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032307375

SP - 271

EP - 272

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Electron emission from etched diamond and its structural analysis

Abstract

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ASJC Scopus subject areas

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