Electron-electron scattering during femtosecond photoexcitation in quantum wells

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

Original languageEnglish (US)
Pages (from-to)463-466
Number of pages4
JournalSolid State Electronics
Volume31
Issue number3-4
DOIs
StatePublished - 1988
Externally publishedYes

Fingerprint

Electron scattering
Photoexcitation
photoexcitation
Semiconductor quantum wells
electron scattering
quantum wells
injection
Electrons
electron distribution
time dependence
Screening
electrons
screening
simulation
Scattering
matrices
scattering
energy
Monte Carlo simulation

Keywords

  • femtosecond photoexcitation
  • hot electrons
  • Monte Carlo simulation
  • nonequilibrium transport
  • Quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electron-electron scattering during femtosecond photoexcitation in quantum wells. / Goodnick, Stephen; Lugli, P.

In: Solid State Electronics, Vol. 31, No. 3-4, 1988, p. 463-466.

Research output: Contribution to journalArticle

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AB - We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

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