Electron-electron scattering during femtosecond photoexcitation in quantum wells

S. M. Goodnick; P. Lugli

doi:10.1016/0038-1101(88)90319-X

Electron-electron scattering during femtosecond photoexcitation in quantum wells

S. M. Goodnick, P. Lugli

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

Original language	English (US)
Pages (from-to)	463-466
Number of pages	4
Journal	Solid State Electronics
Volume	31
Issue number	3-4
DOIs	https://doi.org/10.1016/0038-1101(88)90319-X
State	Published - 1988
Externally published	Yes

Keywords

Monte Carlo simulation
Quantum well
femtosecond photoexcitation
hot electrons
nonequilibrium transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(88)90319-X

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title = "Electron-electron scattering during femtosecond photoexcitation in quantum wells",

abstract = "We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.",

keywords = "Monte Carlo simulation, Quantum well, femtosecond photoexcitation, hot electrons, nonequilibrium transport",

author = "Goodnick, {S. M.} and P. Lugli",

year = "1988",

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T1 - Electron-electron scattering during femtosecond photoexcitation in quantum wells

AU - Goodnick, S. M.

AU - Lugli, P.

PY - 1988

Y1 - 1988

N2 - We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

AB - We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

KW - Monte Carlo simulation

KW - Quantum well

KW - femtosecond photoexcitation

KW - hot electrons

KW - nonequilibrium transport

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SP - 463

EP - 466

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3-4

ER -

Electron-electron scattering during femtosecond photoexcitation in quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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