Electron-electron scattering during femtosecond photoexcitation in quantum wells

S. M. Goodnick, P. Lugli

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We model the dynamics of carriers injected into a semiconductor quantum well during femtosecond photoexcitation using an ensemble Monte Carlo simulation which includes two-dimensional electron-electron scattering. The time evolution of the nonequilibrium electron distribution is used to calculate the time dependence of the multi-subband dielectric matrix during the simulation so that transient effects in the screening are incorporated into the inter-carrier scattering rate. Our results show that band filling occurs within 200fs for small injection energies, the rate of which increases with increasing injection density.

Original languageEnglish (US)
Pages (from-to)463-466
Number of pages4
JournalSolid State Electronics
Volume31
Issue number3-4
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

Keywords

  • Monte Carlo simulation
  • Quantum well
  • femtosecond photoexcitation
  • hot electrons
  • nonequilibrium transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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