Abstract
An analysis of intercarrier scattering in polar semiconductors is presented. It is based on a study of the dielectric function and relies on an Ensemble Monte Carlo technique to investigate the effect of the interaction on hot-electron transport properties.
Original language | English (US) |
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Pages (from-to) | 364-368 |
Number of pages | 5 |
Journal | Physica B+C |
Volume | 134 |
Issue number | 1-3 |
DOIs | |
State | Published - Nov 1985 |
ASJC Scopus subject areas
- General Engineering