Abstract

An Ensemble Monte Carlo code for bulk Silicon is developed that takes into account the non-parabolic band model and analytical dispersion relationships for acoustic and optical phonons. The phonon scattering rates and probability distribution functions for polar angles after scattering are calculated using these analytical expressions and deployed into the Ensemble Monte Carlo (EMC) code. The simulation results of the Velocity-Field characteristics are in excellent agreement with the experimental data for [100] silicon at various temperatures.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages712-715
Number of pages4
StatePublished - Aug 17 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

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ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Cite this

Gada, M. L., Vasileska, D., Raleva, K., & Goodnick, S. (2012). Electron drift velocity calculations in bulk silicon using an analytical model for acoustic and optical phonon dispersions. In Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 712-715). (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).