Abstract

We present simulation results for the drift velocity and mobility in silicon at various temperatures using analytical model which incorporates analytical expressions for the acoustic and optical phonon dispersions. Our simulation results for the field-dependent average drift velocity and mobility are in excellent agreement with the results that utilize the rejection technique and the experimental data for silicon for [100] crystallographic direction at different temperatures.

Original languageEnglish (US)
Title of host publication2012 15th International Workshop on Computational Electronics, IWCE 2012
DOIs
StatePublished - Sep 27 2012
Event2012 15th International Workshop on Computational Electronics, IWCE 2012 - Madison, WI, United States
Duration: May 22 2012May 25 2012

Publication series

Name2012 15th International Workshop on Computational Electronics, IWCE 2012

Other

Other2012 15th International Workshop on Computational Electronics, IWCE 2012
CountryUnited States
CityMadison, WI
Period5/22/125/25/12

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Keywords

  • bulk Monte Carlo method
  • phonon dispersion
  • silicon electron drift velocity
  • silicon electron mobility

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Gada, M. L., Vasileska, D., Goodnick, S., & Raleva, K. (2012). Electron drift velocity and mobility calculation in bulk Si using an analytical model for the phonon dispersion. In 2012 15th International Workshop on Computational Electronics, IWCE 2012 [6242843] (2012 15th International Workshop on Computational Electronics, IWCE 2012). https://doi.org/10.1109/IWCE.2012.6242843