The Raman signal in AlxGa1-xAs has been determined via an ensemble Monte Carlo simulation. We find that the relative scattering of the AlAs-type phonons has an electron density dependence, which has been confirmed experimentally. These results explain the experimental differences seen in the literature. Raman scattering samples the lower momentum flank of the phonon distribution; these phonons arise from contributions by high-energy electrons. As the electron density increases, more electrons occupy these higher-energy states. Only when these higher-energy states are sufficiently occupied does the Raman scattering become a true measure of the "average" scattering in the system.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Dec 15 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics