Electron-density-dependent variation of the relative strength of the dual polar optical modes in AlxGa1-xAs as detected by Raman scattering

L. Shifren, D. K. Ferry, Kong-Thon Tsen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The Raman signal in AlxGa1-xAs has been determined via an ensemble Monte Carlo simulation. We find that the relative scattering of the AlAs-type phonons has an electron density dependence, which has been confirmed experimentally. These results explain the experimental differences seen in the literature. Raman scattering samples the lower momentum flank of the phonon distribution; these phonons arise from contributions by high-energy electrons. As the electron density increases, more electrons occupy these higher-energy states. Only when these higher-energy states are sufficiently occupied does the Raman scattering become a true measure of the "average" scattering in the system.

Original languageEnglish (US)
Pages (from-to)15379-15382
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
StatePublished - Dec 15 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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