Electron beam induced deposition of pure, nanoscale Ge

Sutharsan Ketharanathan, Renu Sharma, Peter Crozier, Jeffery Drucker

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Pure, nanoscale Ge dots were deposited on Si3 N4 substrates by decomposing digermane (Ge2 H6) using a focused electron beam. Deposited feature diameters are larger than that of the electron beam used for deposition by an amount comparable to the secondary electron escape depth. This result suggests that axial secondary electron emission through the surface of a growing feature limits the minimum attainable feature size. In situ, electron energy-loss spectroscopy shows that the dots are pure Ge with C contents below the carbon detection limit of less than 18%. Analyzing the bright field image in the thin film, single scattering approximation yields the height of the Ge dots allowing the average Ge deposition efficiency to be estimated.

Original languageEnglish (US)
Pages (from-to)678-681
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
StatePublished - Mar 2006

Fingerprint

Electron beams
electron beams
Electron energy loss spectroscopy
Electron emission
secondary emission
electron emission
escape
energy dissipation
Scattering
electron energy
Thin films
Carbon
Electrons
carbon
Substrates
thin films
approximation
scattering
spectroscopy
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Electron beam induced deposition of pure, nanoscale Ge. / Ketharanathan, Sutharsan; Sharma, Renu; Crozier, Peter; Drucker, Jeffery.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 2, 03.2006, p. 678-681.

Research output: Contribution to journalArticle

@article{e9945574d536441c8f9dd62dea66684e,
title = "Electron beam induced deposition of pure, nanoscale Ge",
abstract = "Pure, nanoscale Ge dots were deposited on Si3 N4 substrates by decomposing digermane (Ge2 H6) using a focused electron beam. Deposited feature diameters are larger than that of the electron beam used for deposition by an amount comparable to the secondary electron escape depth. This result suggests that axial secondary electron emission through the surface of a growing feature limits the minimum attainable feature size. In situ, electron energy-loss spectroscopy shows that the dots are pure Ge with C contents below the carbon detection limit of less than 18{\%}. Analyzing the bright field image in the thin film, single scattering approximation yields the height of the Ge dots allowing the average Ge deposition efficiency to be estimated.",
author = "Sutharsan Ketharanathan and Renu Sharma and Peter Crozier and Jeffery Drucker",
year = "2006",
month = "3",
doi = "10.1116/1.2178372",
language = "English (US)",
volume = "24",
pages = "678--681",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Electron beam induced deposition of pure, nanoscale Ge

AU - Ketharanathan, Sutharsan

AU - Sharma, Renu

AU - Crozier, Peter

AU - Drucker, Jeffery

PY - 2006/3

Y1 - 2006/3

N2 - Pure, nanoscale Ge dots were deposited on Si3 N4 substrates by decomposing digermane (Ge2 H6) using a focused electron beam. Deposited feature diameters are larger than that of the electron beam used for deposition by an amount comparable to the secondary electron escape depth. This result suggests that axial secondary electron emission through the surface of a growing feature limits the minimum attainable feature size. In situ, electron energy-loss spectroscopy shows that the dots are pure Ge with C contents below the carbon detection limit of less than 18%. Analyzing the bright field image in the thin film, single scattering approximation yields the height of the Ge dots allowing the average Ge deposition efficiency to be estimated.

AB - Pure, nanoscale Ge dots were deposited on Si3 N4 substrates by decomposing digermane (Ge2 H6) using a focused electron beam. Deposited feature diameters are larger than that of the electron beam used for deposition by an amount comparable to the secondary electron escape depth. This result suggests that axial secondary electron emission through the surface of a growing feature limits the minimum attainable feature size. In situ, electron energy-loss spectroscopy shows that the dots are pure Ge with C contents below the carbon detection limit of less than 18%. Analyzing the bright field image in the thin film, single scattering approximation yields the height of the Ge dots allowing the average Ge deposition efficiency to be estimated.

UR - http://www.scopus.com/inward/record.url?scp=33645503256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645503256&partnerID=8YFLogxK

U2 - 10.1116/1.2178372

DO - 10.1116/1.2178372

M3 - Article

AN - SCOPUS:33645503256

VL - 24

SP - 678

EP - 681

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 2

ER -