Electron-beam induced current in GaAs field-effect transistors

D. S. Newman; D. K. Ferry

doi:10.1063/1.93442

Electron-beam induced current in GaAs field-effect transistors

D. S. Newman, D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have used an electron beam to probe the active region of n-channel GaAs junction field-effect transistors. The injected charge leads to a rise in drain current (Δi_D), and static current gains (Δi_D / Δi_B) in excess of 10⁷ are observed. These gains are ∼10⁴ greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.

Original language	English (US)
Pages (from-to)	169-171
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	2
DOIs	https://doi.org/10.1063/1.93442
State	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have used an electron beam to probe the active region of n-channel GaAs junction field-effect transistors. The injected charge leads to a rise in drain current (ΔiD), and static current gains (ΔiD / ΔiB) in excess of 107 are observed. These gains are ∼104 greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.",

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AU - Ferry, D. K.

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N2 - We have used an electron beam to probe the active region of n-channel GaAs junction field-effect transistors. The injected charge leads to a rise in drain current (ΔiD), and static current gains (ΔiD / ΔiB) in excess of 107 are observed. These gains are ∼104 greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.

AB - We have used an electron beam to probe the active region of n-channel GaAs junction field-effect transistors. The injected charge leads to a rise in drain current (ΔiD), and static current gains (ΔiD / ΔiB) in excess of 107 are observed. These gains are ∼104 greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.

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Electron-beam induced current in GaAs field-effect transistors

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