We have used an electron beam to probe the active region of n-channel GaAs junction field-effect transistors. The injected charge leads to a rise in drain current (ΔiD), and static current gains (ΔiD / ΔiB) in excess of 107 are observed. These gains are ∼104 greater than expected from pair production given the incident beam energy (15 kV). It has been previously suggested that the injected charge modifies the surface potential, but we find the major effect to be an effective channel thickness increase. In addition, this channel opening and the current gain saturate at high beam current.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)