Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid

Michael Kozicki; S. J. Yang; B. W. Axelrod

doi:10.1006/spmi.2000.0826

Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid

Michael Kozicki, S. J. Yang, B. W. Axelrod

Research output: Contribution to journal › Article › peer-review

Abstract

Tapping mode atomic force microscopy and capacitance versus voltage measurements were employed to study the effects of electron-beam exposure on self-assembled monolayers of 10-undecenoic acid. It was established that exposure increases chemical/mechanical stability, resulting in a thicker layer following a solvent treatment designed to remove residual monomers. Electron exposure also reduces the effects of pinholes in the monolayer, thereby improving dielectric quality.

Original language	English (US)
Pages (from-to)	481-484
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0826
State	Published - 2000

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0826

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abstract = "Tapping mode atomic force microscopy and capacitance versus voltage measurements were employed to study the effects of electron-beam exposure on self-assembled monolayers of 10-undecenoic acid. It was established that exposure increases chemical/mechanical stability, resulting in a thicker layer following a solvent treatment designed to remove residual monomers. Electron exposure also reduces the effects of pinholes in the monolayer, thereby improving dielectric quality.",

author = "Michael Kozicki and Yang, {S. J.} and Axelrod, {B. W.}",

note = "Funding Information: Acknowledgement—Work supported by the Office of Naval Research.",

year = "2000",

doi = "10.1006/spmi.2000.0826",

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Y1 - 2000

N2 - Tapping mode atomic force microscopy and capacitance versus voltage measurements were employed to study the effects of electron-beam exposure on self-assembled monolayers of 10-undecenoic acid. It was established that exposure increases chemical/mechanical stability, resulting in a thicker layer following a solvent treatment designed to remove residual monomers. Electron exposure also reduces the effects of pinholes in the monolayer, thereby improving dielectric quality.

AB - Tapping mode atomic force microscopy and capacitance versus voltage measurements were employed to study the effects of electron-beam exposure on self-assembled monolayers of 10-undecenoic acid. It was established that exposure increases chemical/mechanical stability, resulting in a thicker layer following a solvent treatment designed to remove residual monomers. Electron exposure also reduces the effects of pinholes in the monolayer, thereby improving dielectric quality.

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Electron-beam exposure of self-assembled monolayers of 10-undecenoic acid

Abstract

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