@inproceedings{a3329e09374c49d68c3bef4b50f5eb88,

title = "Electromechanical coupling in AlGaN/AlN/GaN HEMT's",

abstract = "We report on a theoretical model which provides the gate voltage dependence of the piezoelectric polarization charge in GaN HEMT devices. The model utilizes a generalization of Gauss' law, imposing constraints on the electric displacement vector D. The constraint on D is given by the continuity of the perpendicular component of the displacement vector across an interface. Poisson's equation is then solved across various layers under proper boundary conditions for the applied bias. The piezoelectric polarization charge is reduced due to the electromechanical coupling compared to the uncoupled case. Under high sheet electron densities, the correction in the piezoelectric polarization charge is also lower due to smaller electric fields.",

keywords = "GaN HEMTs, Piezoelectric polarization charge density",

author = "B. Padmanabhan and Dragica Vasileska and Stephen Goodnick",

year = "2011",

month = nov,

day = "23",

language = "English (US)",

isbn = "9781439871393",

series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

pages = "679--681",

booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",

}