Electromagnetic-wave effects on closely packed microwave transistors using a fast time-domain simulation approach

Yasser A. Hussein, Samir M. El-Ghazaly, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a new time-domain modeling technique to study the effect of electromagnetic-wave propagation on the performance of closely packed microwave transistors. The proposed approach solves the active device model that combines the transport physics, and Maxwell's Equations on nonuniform self-adaptive grids, obtained by applying Daubechies wavelet transforms followed by thresholding. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The developed technique is applied to full-wave simulate two closely packed millimeter-wave transistors. Different numerical examples are presented; showing that accurate modeling of high-frequency devices should incorporate the effect of EM-wave propagation within and around the device. To our knowledge, this is the first time in literature to Implement and report a wavelet-based technique for a fast full-wave physical simulation of more than one millimeter-wave transistor simultaneously.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
EditorsH. Thal
Pages989-992
Number of pages4
Volume2
StatePublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: Jun 8 2003Jun 13 2003

Other

Other2003 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CityPhiladelphia, PA
Period6/8/036/13/03

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Hussein, Y. A., El-Ghazaly, S. M., & Goodnick, S. (2003). Electromagnetic-wave effects on closely packed microwave transistors using a fast time-domain simulation approach. In H. Thal (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 989-992)