Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

J. D. Gallagher, C. L. Senaratne, P. Sims, T. Aoki, Jose Menendez, John Kouvetakis

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37 Citations (Scopus)

Abstract

The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1- ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1- ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

Original languageEnglish (US)
Article number091103
JournalApplied Physics Letters
Volume106
Issue number9
DOIs
StatePublished - Mar 2 2015

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electroluminescence
diodes
dark current
crossovers
trends
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition. / Gallagher, J. D.; Senaratne, C. L.; Sims, P.; Aoki, T.; Menendez, Jose; Kouvetakis, John.

In: Applied Physics Letters, Vol. 106, No. 9, 091103, 02.03.2015.

Research output: Contribution to journalArticle

@article{12df9b2206a54ec7b089d737f799365b,
title = "Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition",
abstract = "The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1- ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1- ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.",
author = "Gallagher, {J. D.} and Senaratne, {C. L.} and P. Sims and T. Aoki and Jose Menendez and John Kouvetakis",
year = "2015",
month = "3",
day = "2",
doi = "10.1063/1.4913688",
language = "English (US)",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

AU - Gallagher, J. D.

AU - Senaratne, C. L.

AU - Sims, P.

AU - Aoki, T.

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2015/3/2

Y1 - 2015/3/2

N2 - The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1- ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1- ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

AB - The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1- ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1- ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

UR - http://www.scopus.com/inward/record.url?scp=84924057529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924057529&partnerID=8YFLogxK

U2 - 10.1063/1.4913688

DO - 10.1063/1.4913688

M3 - Article

AN - SCOPUS:84924057529

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 091103

ER -