Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions

J. D. Gallagher, C. L. Senaratne, P. M. Wallace, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The light emission properties of GeSn pn diodes were investigated as a function of alloy composition and doping levels. Very sharp interfaces between contiguous ultra-highly doped p- and n-layers were obtained using in situ doping with B<inf>2</inf>H<inf>6</inf> and P(SiH<inf>3</inf>)<inf>3</inf> in a chemical vapor deposition environment, yielding nearly ideal model systems for systematic studies. Changes in the doping levels and layer Sn concentrations are shown to greatly affect the electroluminescence spectra. This sensitivity should make it possible to optimize the emission efficiency for these structures in the interesting quasi-direct regime, for which direct gap luminescence is observed due to the proximity of the conduction band quasi-Fermi level to the minimum of the conduction band at the center of the Brillouin zone. Such structures represent the basic building block of Ge-based electrically pumped lasers.

Original languageEnglish (US)
Article number123507
JournalApplied Physics Letters
Volume107
Issue number12
DOIs
StatePublished - Sep 21 2015

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electroluminescence
diodes
conduction bands
Brillouin zones
light emission
proximity
vapor deposition
luminescence
sensitivity
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions. / Gallagher, J. D.; Senaratne, C. L.; Wallace, P. M.; Menendez, Jose; Kouvetakis, John.

In: Applied Physics Letters, Vol. 107, No. 12, 123507, 21.09.2015.

Research output: Contribution to journalArticle

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