Electroluminescence by impact excitation of excitons in a monolayer WSe2

Jiabin Feng; Yongzhuo Li; Song Fu; Zhang Jianxing; Hao Sun; Lin Gan; C. Z. Ning

doi:10.1364/CLEO_AT.2020.JW2F.5

Electroluminescence by impact excitation of excitons in a monolayer WSe₂

Jiabin Feng, Yongzhuo Li, Song Fu, Zhang Jianxing, Hao Sun, Lin Gan, C. Z. Ning

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Applications and Technology, CLEO_AT 2020
Publisher	OSA - The Optical Society
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1364/CLEO_AT.2020.JW2F.5
State	Published - 2020
Event	CLEO: Applications and Technology, CLEO_AT 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F181-CLEO-AT 2020

Conference

Conference	CLEO: Applications and Technology, CLEO_AT 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/CLEO_AT.2020.JW2F.5

Cite this

Feng, J, Li, Y, Fu, S, Jianxing, Z, Sun, H, Gan, L & Ning, CZ 2020, Electroluminescence by impact excitation of excitons in a monolayer WSe₂. in CLEO: Applications and Technology, CLEO_AT 2020., JW2F.5, Optics InfoBase Conference Papers, vol. Part F181-CLEO-AT 2020, OSA - The Optical Society, CLEO: Applications and Technology, CLEO_AT 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_AT.2020.JW2F.5

@inproceedings{efe79f8a2ab24d05a3a12b6b0a06d80c,

title = "Electroluminescence by impact excitation of excitons in a monolayer WSe2",

abstract = "We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.",

author = "Jiabin Feng and Yongzhuo Li and Song Fu and Zhang Jianxing and Hao Sun and Lin Gan and Ning, {C. Z.}",

note = "Funding Information: The authors acknowledge financial support from the National Natural Science Foundation of China (Grant No. 91750206, No. 61861136006, No. 61705118, and No. 11774412, No. 61975252), Beijing Natural Science Foundation (Z180012), Beijing Innovation Center for Future Chips, Beijing National Center for Information Science and Technology, the 985 University Program, and Tsinghua University Initiative Scientific Research Program (No. 20141081296) and the program of China Scholarships Council (No. 201806210295). Funding Information: The authors acknowledge financial support from the National Natural Science Foundation of China (Grant No. 91750206, No. 61861136006, No. 61705118, and No. 11774412, No. 61975252), Beijing Natural Science Foundation (Z180012), Beijing Innovation Center for Future Chips, Beijing National Center for Information Science and Technology, the 985 University Program, and Tsinghua University Initiative Scientific Research Program (No. 20141081296) and the program of China Scholarships Council (No. 201806210295)..; CLEO: Applications and Technology, CLEO_AT 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

doi = "10.1364/CLEO_AT.2020.JW2F.5",

language = "English (US)",

series = "Optics InfoBase Conference Papers",

publisher = "OSA - The Optical Society",

booktitle = "CLEO",

}

TY - GEN

T1 - Electroluminescence by impact excitation of excitons in a monolayer WSe2

AU - Feng, Jiabin

AU - Li, Yongzhuo

AU - Fu, Song

AU - Jianxing, Zhang

AU - Sun, Hao

AU - Gan, Lin

AU - Ning, C. Z.

N1 - Funding Information: The authors acknowledge financial support from the National Natural Science Foundation of China (Grant No. 91750206, No. 61861136006, No. 61705118, and No. 11774412, No. 61975252), Beijing Natural Science Foundation (Z180012), Beijing Innovation Center for Future Chips, Beijing National Center for Information Science and Technology, the 985 University Program, and Tsinghua University Initiative Scientific Research Program (No. 20141081296) and the program of China Scholarships Council (No. 201806210295). Funding Information: The authors acknowledge financial support from the National Natural Science Foundation of China (Grant No. 91750206, No. 61861136006, No. 61705118, and No. 11774412, No. 61975252), Beijing Natural Science Foundation (Z180012), Beijing Innovation Center for Future Chips, Beijing National Center for Information Science and Technology, the 985 University Program, and Tsinghua University Initiative Scientific Research Program (No. 20141081296) and the program of China Scholarships Council (No. 201806210295)..

PY - 2020

Y1 - 2020

N2 - We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.

AB - We demonstrated exciton electroluminescence by impact excitation in a monolayer WSe2 based field effect transistor on SiO2/Si substrate at room temperature. Hot electrons or holes can be controlled as impact sources through the back gate.

UR - http://www.scopus.com/inward/record.url?scp=85095134640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85095134640&partnerID=8YFLogxK

U2 - 10.1364/CLEO_AT.2020.JW2F.5

DO - 10.1364/CLEO_AT.2020.JW2F.5

M3 - Conference contribution

AN - SCOPUS:85095134640

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - OSA - The Optical Society

T2 - CLEO: Applications and Technology, CLEO_AT 2020

Y2 - 10 May 2020 through 15 May 2020

ER -