Electroluminescence and transmission electron microscopy characterization of reverse-biased AlGaN/GaN devices

Engineering & Materials Science

• Electroluminescence 100%
• Transmission electron microscopy 65%
• Defects 43%
• Leakage currents 34%
• Electron microscopy 27%
• Microscopic examination 22%
• Electric potential 21%
• Testing 16%
• Focused ion beams 14%
• Sapphire 14%
• Heterojunctions 13%
• High electron mobility transistors 12%
• Nucleation 11%
• Semiconductor materials 9%
• Failure modes 9%
• Acoustic impedance 7%
• Substrates 7%
• Cracks 7%
• Metals 6%
• Experiments 3%

Chemical Compounds

• Electroluminescence 65%
• Transmission Electron Microscopy 41%
• Leakage Current 41%
• Voltage 30%
• Electron Microscopy 18%
• Electron Mobility 12%
• Time 11%
• Nucleation 8%
• Semiconductor 8%
• Metal 4%