Electrodeposition of Ni 3S 2 for photovoltaic applications: Colloidal sulfur stabilization by gelatin

Munteha Pac, Xiaofei Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Electrodeposition of Ni 3S 2 with significantly improved uniformity and adhesion to F-doped SnO 2 substrate is reported. Ni 3S 2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO 4, Na 2S 2O 3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO 4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni 3S 2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO 4, 0.5M Na 2S 2O 3, 8.8×10 -4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages157-166
Number of pages10
Volume41
Edition4
DOIs
StatePublished - 2011
Externally publishedYes
EventPhotovoltaics for the 21st Century 7 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Other

OtherPhotovoltaics for the 21st Century 7 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

Fingerprint

Electrodeposition
Sulfur
Stabilization
Adhesion
Substrates
Temperature
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Electrodeposition of Ni 3S 2 for photovoltaic applications : Colloidal sulfur stabilization by gelatin. / Pac, Munteha; Han, Xiaofei; Tao, Meng.

ECS Transactions. Vol. 41 4. ed. 2011. p. 157-166.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pac, M, Han, X & Tao, M 2011, Electrodeposition of Ni 3S 2 for photovoltaic applications: Colloidal sulfur stabilization by gelatin. in ECS Transactions. 4 edn, vol. 41, pp. 157-166, Photovoltaics for the 21st Century 7 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3628621
Pac, Munteha ; Han, Xiaofei ; Tao, Meng. / Electrodeposition of Ni 3S 2 for photovoltaic applications : Colloidal sulfur stabilization by gelatin. ECS Transactions. Vol. 41 4. ed. 2011. pp. 157-166
@inproceedings{f09be6a5a08742e58edade0d07ffbae6,
title = "Electrodeposition of Ni 3S 2 for photovoltaic applications: Colloidal sulfur stabilization by gelatin",
abstract = "Electrodeposition of Ni 3S 2 with significantly improved uniformity and adhesion to F-doped SnO 2 substrate is reported. Ni 3S 2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO 4, Na 2S 2O 3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO 4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni 3S 2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO 4, 0.5M Na 2S 2O 3, 8.8×10 -4 wt{\%} gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.",
author = "Munteha Pac and Xiaofei Han and Meng Tao",
year = "2011",
doi = "10.1149/1.3628621",
language = "English (US)",
isbn = "9781566779043",
volume = "41",
pages = "157--166",
booktitle = "ECS Transactions",
edition = "4",

}

TY - GEN

T1 - Electrodeposition of Ni 3S 2 for photovoltaic applications

T2 - Colloidal sulfur stabilization by gelatin

AU - Pac, Munteha

AU - Han, Xiaofei

AU - Tao, Meng

PY - 2011

Y1 - 2011

N2 - Electrodeposition of Ni 3S 2 with significantly improved uniformity and adhesion to F-doped SnO 2 substrate is reported. Ni 3S 2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO 4, Na 2S 2O 3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO 4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni 3S 2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO 4, 0.5M Na 2S 2O 3, 8.8×10 -4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

AB - Electrodeposition of Ni 3S 2 with significantly improved uniformity and adhesion to F-doped SnO 2 substrate is reported. Ni 3S 2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO 4, Na 2S 2O 3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO 4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni 3S 2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO 4, 0.5M Na 2S 2O 3, 8.8×10 -4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

UR - http://www.scopus.com/inward/record.url?scp=84857351392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857351392&partnerID=8YFLogxK

U2 - 10.1149/1.3628621

DO - 10.1149/1.3628621

M3 - Conference contribution

AN - SCOPUS:84857351392

SN - 9781566779043

VL - 41

SP - 157

EP - 166

BT - ECS Transactions

ER -