Electrodeposition of Ni3S2 for photovoltaic applications: Colloidal sulfur stabilization by gelatin

Munteha Pac; Xiaofei Han; Meng Tao

doi:10.1149/1.3628621

Electrodeposition of Ni₃S₂ for photovoltaic applications: Colloidal sulfur stabilization by gelatin

Munteha Pac, Xiaofei Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Electrodeposition of Ni₃S₂ with significantly improved uniformity and adhesion to F-doped SnO₂ substrate is reported. Ni₃S₂ films of about 1 μm thickness were deposited from an aqueous solution containing NiSO₄, Na ₂S₂O₃ and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO₄ concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni₃S₂ films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO₄, 0.5M Na₂S₂O₃, 8.8×10^-4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

Original language	English (US)
Title of host publication	Photovoltaics for the 21st Century 7
Publisher	Electrochemical Society Inc.
Pages	157-166
Number of pages	10
Edition	4
ISBN (Electronic)	9781607682585
ISBN (Print)	9781566779043
DOIs	https://doi.org/10.1149/1.3628621
State	Published - 2011
Externally published	Yes
Event	Photovoltaics for the 21st Century 7 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	4
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Photovoltaics for the 21st Century 7 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3628621

Cite this

Pac, M, Han, X & Tao, M 2011, Electrodeposition of Ni₃S₂ for photovoltaic applications: Colloidal sulfur stabilization by gelatin. in Photovoltaics for the 21st Century 7. 4 edn, ECS Transactions, no. 4, vol. 41, Electrochemical Society Inc., pp. 157-166, Photovoltaics for the 21st Century 7 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3628621

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title = "Electrodeposition of Ni3S2 for photovoltaic applications: Colloidal sulfur stabilization by gelatin",

abstract = "Electrodeposition of Ni3S2 with significantly improved uniformity and adhesion to F-doped SnO2 substrate is reported. Ni3S2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO4, Na 2S2O3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni3S2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO4, 0.5M Na2S2O3, 8.8×10-4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.",

author = "Munteha Pac and Xiaofei Han and Meng Tao",

year = "2011",

doi = "10.1149/1.3628621",

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publisher = "Electrochemical Society Inc.",

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AU - Han, Xiaofei

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N2 - Electrodeposition of Ni3S2 with significantly improved uniformity and adhesion to F-doped SnO2 substrate is reported. Ni3S2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO4, Na 2S2O3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni3S2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO4, 0.5M Na2S2O3, 8.8×10-4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

AB - Electrodeposition of Ni3S2 with significantly improved uniformity and adhesion to F-doped SnO2 substrate is reported. Ni3S2 films of about 1 μm thickness were deposited from an aqueous solution containing NiSO4, Na 2S2O3 and gelatin. Gelatin is found to stabilize the size of colloidal sulfur to ∼260 nm, keeping the electroactive sulfur concentration stable during the deposition. Other deposition parameters such as NiSO4 concentration, bath temperature and deposition potential are found to have a profound effect on film morphology and adhesion. Ni3S2 films with a uniform composition across the entire substrate can be deposited from a solution containing 0.013M NiSO4, 0.5M Na2S2O3, 8.8×10-4 wt% gelatin at 60°C temperature, pH 4.7 and -0.4V deposition potential.

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