TY - GEN
T1 - Electrodeposition of group-IIIA doped ZnO as a transparent conductive oxide
AU - Han, Xiaofei
AU - Han, Kunhee
AU - Tao, Meng
PY - 2009
Y1 - 2009
N2 - Electrodeposition of Group-IIIA (Al and Ga) doped ZnO with resistivity as low as 3.8×10-4 Ω-cm is reported here. This ZnO can be used as an "on-top" transparent conductive oxide which is deposited on semiconductors in thin-film solar cells such as amorphous Si, CIGS, and organic cells. In addition to low cost, high throughput, and large-area processing, electrodeposition provides advantages other solution-based deposition techniques do not offer, including precise and in-line control of the film thickness. After post-deposition annealing, Al-doped ZnO achieves a resistivity of 8×10-4 Ω-cm and Ga-doped ZnO 3.8×10-4 Ω-cm, respectively. The doping mechanism is believed to be coprecipitation of ZnO with Al2O3 or Ga2O3 in the aqueous solution, leading to Al or Ga substitution of Zn in the ZnO lattice as n-type dopant. Both Al-doped and Ga-doped ZnO shows high transmittance above 80% for films of ∼450 nm thick.
AB - Electrodeposition of Group-IIIA (Al and Ga) doped ZnO with resistivity as low as 3.8×10-4 Ω-cm is reported here. This ZnO can be used as an "on-top" transparent conductive oxide which is deposited on semiconductors in thin-film solar cells such as amorphous Si, CIGS, and organic cells. In addition to low cost, high throughput, and large-area processing, electrodeposition provides advantages other solution-based deposition techniques do not offer, including precise and in-line control of the film thickness. After post-deposition annealing, Al-doped ZnO achieves a resistivity of 8×10-4 Ω-cm and Ga-doped ZnO 3.8×10-4 Ω-cm, respectively. The doping mechanism is believed to be coprecipitation of ZnO with Al2O3 or Ga2O3 in the aqueous solution, leading to Al or Ga substitution of Zn in the ZnO lattice as n-type dopant. Both Al-doped and Ga-doped ZnO shows high transmittance above 80% for films of ∼450 nm thick.
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U2 - 10.1149/1.3300426
DO - 10.1149/1.3300426
M3 - Conference contribution
AN - SCOPUS:79952760146
SN - 9781566777827
T3 - ECS Transactions
SP - 93
EP - 102
BT - Photovoltaics for the 21st Century 5
PB - Electrochemical Society Inc.
ER -