Electrodeposition of Group-IIIA (Al and Ga) doped ZnO with resistivity as low as 3.8×10-4 Ω-cm is reported here. This ZnO can be used as an "on-top" transparent conductive oxide which is deposited on semiconductors in thin-film solar cells such as amorphous Si, CIGS, and organic cells. In addition to low cost, high throughput, and large-area processing, electrodeposition provides advantages other solution-based deposition techniques do not offer, including precise and in-line control of the film thickness. After post-deposition annealing, Al-doped ZnO achieves a resistivity of 8×10-4 Ω-cm and Ga-doped ZnO 3.8×10-4 Ω-cm, respectively. The doping mechanism is believed to be coprecipitation of ZnO with Al2O3 or Ga2O3 in the aqueous solution, leading to Al or Ga substitution of Zn in the ZnO lattice as n-type dopant. Both Al-doped and Ga-doped ZnO shows high transmittance above 80% for films of ∼450 nm thick.