Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory

Hong Yu Chen, He Tian, Bin Gao, Shimeng Yu, Jiale Liang, Jinfeng Kang, Yuegang Zhang, Tian Ling Ren, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Electrode/oxide interface with inserted single-layer graphene (SLG) increases low resistance state (LRS) resistance (> 1M) due to its intrinsically high out-of-plane resistance in HfOx-based resistive random access memory (RRAM). This interface engineering technique enables the reduction of the RESET current by 22 times and the programming power consumption by 47 times. The interface between oxide layer and metal electrode is studied using Ramen spectroscopy coupled with electrical measurement. Raman mapping and single point measurements show noticeable changes in both D-band and G-band signals of SLG during electrical cycling. This observation suggests a possible interaction of oxygen migrated from the metal oxide with the graphene. This work illustrates that interface engineering design plays an important role for RRAM material selection in addition to exploring different metal oxides or metal electrode materials for RRAM.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

Fingerprint

Graphite
random access memory
Oxides
Graphene
graphene
Metals
engineering
Interfaces (computer)
Data storage equipment
Electrodes
electrodes
oxides
metal oxides
materials selection
low resistance
electrode materials
programming
metals
electrical measurement
Electric power utilization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Chen, H. Y., Tian, H., Gao, B., Yu, S., Liang, J., Kang, J., ... Wong, H. S. P. (2012). Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory. In Technical Digest - International Electron Devices Meeting, IEDM [6479081] https://doi.org/10.1109/IEDM.2012.6479081

Electrode/oxide interface engineering by inserting single-layer graphene : Application for HfOx-based resistive random access memory. / Chen, Hong Yu; Tian, He; Gao, Bin; Yu, Shimeng; Liang, Jiale; Kang, Jinfeng; Zhang, Yuegang; Ren, Tian Ling; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479081.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, HY, Tian, H, Gao, B, Yu, S, Liang, J, Kang, J, Zhang, Y, Ren, TL & Wong, HSP 2012, Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory. in Technical Digest - International Electron Devices Meeting, IEDM., 6479081, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479081
Chen HY, Tian H, Gao B, Yu S, Liang J, Kang J et al. Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory. In Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479081 https://doi.org/10.1109/IEDM.2012.6479081
Chen, Hong Yu ; Tian, He ; Gao, Bin ; Yu, Shimeng ; Liang, Jiale ; Kang, Jinfeng ; Zhang, Yuegang ; Ren, Tian Ling ; Wong, H. S Philip. / Electrode/oxide interface engineering by inserting single-layer graphene : Application for HfOx-based resistive random access memory. Technical Digest - International Electron Devices Meeting, IEDM. 2012.
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