Abstract
The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 153-157 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 93 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2009 |
| Externally published | Yes |
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Keywords
- Cuprous oxide
- Electrodeposition
- p-n homojunction
- Photovoltaic device
- Resistivity
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cite this
Electrochemically deposited p-n homojunction cuprous oxide solar cells. / Han, Kunhee; Tao, Meng.
In: Solar Energy Materials and Solar Cells, Vol. 93, No. 1, 01.2009, p. 153-157.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrochemically deposited p-n homojunction cuprous oxide solar cells
AU - Han, Kunhee
AU - Tao, Meng
PY - 2009/1
Y1 - 2009/1
N2 - The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.
AB - The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.
KW - Cuprous oxide
KW - Electrodeposition
KW - p-n homojunction
KW - Photovoltaic device
KW - Resistivity
UR - http://www.scopus.com/inward/record.url?scp=55949111362&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55949111362&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2008.09.023
DO - 10.1016/j.solmat.2008.09.023
M3 - Article
AN - SCOPUS:55949111362
VL - 93
SP - 153
EP - 157
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1
ER -