Electrochemically deposited p-n homojunction cuprous oxide solar cells

Kunhee Han; Meng Tao

doi:10.1016/j.solmat.2008.09.023

Electrochemically deposited p-n homojunction cuprous oxide solar cells

Kunhee Han, Meng Tao

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article

156 Scopus citations

Abstract

The electrical properties of both p- and n-type cuprous oxide (Cu₂O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu₂O varied from 3.2×10⁵ to 2.0×10⁸ Ω cm, while that of n-type Cu₂O from 2.5×10⁷ to 8.0×10⁸ Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu₂O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu₂O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu₂O, which require doping to reduce.

Original language	English (US)
Pages (from-to)	153-157
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2008.09.023
State	Published - Jan 1 2009

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Keywords

Cuprous oxide
Electrodeposition
Photovoltaic device
Resistivity
p-n homojunction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Cite this

Han, K., & Tao, M. (2009). Electrochemically deposited p-n homojunction cuprous oxide solar cells. Solar Energy Materials and Solar Cells, 93(1), 153-157. https://doi.org/10.1016/j.solmat.2008.09.023

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abstract = "The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.",

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AB - The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.

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10.1016/j.solmat.2008.09.023