Electrochemically deposited p-n homojunction cuprous oxide solar cells

Kunhee Han, Meng Tao

Research output: Contribution to journalArticle

156 Scopus citations

Abstract

The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume93
Issue number1
DOIs
StatePublished - Jan 1 2009

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Keywords

  • Cuprous oxide
  • Electrodeposition
  • Photovoltaic device
  • Resistivity
  • p-n homojunction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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