Electrochemically deposited p-n homojunction cuprous oxide solar cells

Kunhee Han; Meng Tao

doi:10.1016/j.solmat.2008.09.023

Electrochemically deposited p-n homojunction cuprous oxide solar cells

Kunhee Han, Meng Tao

Research output: Contribution to journal › Article › peer-review

165 Scopus citations

Abstract

The electrical properties of both p- and n-type cuprous oxide (Cu₂O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu₂O varied from 3.2×10⁵ to 2.0×10⁸ Ω cm, while that of n-type Cu₂O from 2.5×10⁷ to 8.0×10⁸ Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu₂O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu₂O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu₂O, which require doping to reduce.

Original language	English (US)
Pages (from-to)	153-157
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2008.09.023
State	Published - Jan 1 2009
Externally published	Yes

Keywords

Cuprous oxide
Electrodeposition
Photovoltaic device
Resistivity
p-n homojunction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2008.09.023

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Cite this

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title = "Electrochemically deposited p-n homojunction cuprous oxide solar cells",

abstract = "The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.",

keywords = "Cuprous oxide, Electrodeposition, Photovoltaic device, Resistivity, p-n homojunction",

author = "Kunhee Han and Meng Tao",

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AU - Han, Kunhee

AU - Tao, Meng

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N2 - The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.

AB - The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.

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KW - Electrodeposition

KW - Photovoltaic device

KW - Resistivity

KW - p-n homojunction

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