Abstract
The electrical properties of both p- and n-type cuprous oxide (Cu2O) films electrochemically deposited from two electrolyte solutions were examined by current-voltage measurements. The resistivity of p-type Cu2O varied from 3.2×105 to 2.0×108 Ω cm, while that of n-type Cu2O from 2.5×107 to 8.0×108 Ω cm, depending on deposition conditions such as solution pH, deposition potential and temperature. With optimized deposition conditions for minimum resistivity, p-n homojunction Cu2O solar cells were fabricated by a two-step deposition process. The p-n homojunction Cu2O solar cells showed a conversion efficiency of 0.1% under AM1 illumination. The low efficiency is attributed to the high resistivity of p- and n-type Cu2O, which require doping to reduce.
Original language | English (US) |
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Pages (from-to) | 153-157 |
Number of pages | 5 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 93 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2009 |
Externally published | Yes |
Keywords
- Cuprous oxide
- Electrodeposition
- Photovoltaic device
- Resistivity
- p-n homojunction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films