Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions: A surface chemical study

J. Yota, Veronica Burrows

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages105-110
Number of pages6
Volume282
ISBN (Print)1558991778
StatePublished - 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

Fingerprint

Sulfur
Arsenic
Electronic properties
Oxygen Compounds
Surface states
Photoelectron spectroscopy
sodium sulfide
gallium arsenide
Fermi level
Oxides
Carbonates
Sodium
Spectroscopy
Infrared radiation
X rays
Oxygen
Water

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yota, J., & Burrows, V. (1993). Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions: A surface chemical study. In Materials Research Society Symposium Proceedings (Vol. 282, pp. 105-110). Pittsburgh, PA, United States: Publ by Materials Research Society.

Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions : A surface chemical study. / Yota, J.; Burrows, Veronica.

Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 105-110.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yota, J & Burrows, V 1993, Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions: A surface chemical study. in Materials Research Society Symposium Proceedings. vol. 282, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 105-110, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.
Yota J, Burrows V. Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions: A surface chemical study. In Materials Research Society Symposium Proceedings. Vol. 282. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 105-110
Yota, J. ; Burrows, Veronica. / Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions : A surface chemical study. Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 105-110
@inproceedings{769c18b3e21841c9b194552c557fc452,
title = "Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions: A surface chemical study",
abstract = "Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.",
author = "J. Yota and Veronica Burrows",
year = "1993",
language = "English (US)",
isbn = "1558991778",
volume = "282",
pages = "105--110",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions

T2 - A surface chemical study

AU - Yota, J.

AU - Burrows, Veronica

PY - 1993

Y1 - 1993

N2 - Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.

AB - Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.

UR - http://www.scopus.com/inward/record.url?scp=0027152569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027152569&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027152569

SN - 1558991778

VL - 282

SP - 105

EP - 110

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

CY - Pittsburgh, PA, United States

ER -