TY - GEN
T1 - Electrochemical sulfur treatments of GaAs using Na2S and (NH4)2S solutions
T2 - Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
AU - Yota, J.
AU - Burrows, Veronica
PY - 1993/1/1
Y1 - 1993/1/1
N2 - Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.
AB - Chemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4)2S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.
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M3 - Conference contribution
AN - SCOPUS:0027152569
SN - 1558991778
T3 - Materials Research Society Symposium Proceedings
SP - 105
EP - 110
BT - Chemical Perspectives of Microelectronic Materials III
PB - Publ by Materials Research Society
Y2 - 30 November 1992 through 3 December 1992
ER -