Abstract
An electrode position technique is described that produces atomically flat epitaxial metal overlayers of quality similar to that obtained by ultrahigh vacuum techniques at elevated temperature. In this approach, a metal of interest such as silver is co-deposited with a reversibly deposited mediator metal The mediator is periodically deposited and stripped from the surface, and this serves to significantly increase the density of two- dimensional islands of silver atoms, promoting a layer-by-layer thin-film growth mode. In situ scanning tunneling microscopy was used to demonstrate the growth process for the heteroepitaxial system silver/gold (111) with either lead or copper as the mediator.
Original language | English (US) |
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Pages (from-to) | 138-141 |
Number of pages | 4 |
Journal | Science |
Volume | 284 |
Issue number | 5411 |
DOIs | |
State | Published - Apr 2 1999 |
ASJC Scopus subject areas
- General