Abstract

In this paper we present simulation results obtained with our electro-thermal device simulator when modeling different technology generations of nano-scale fully depleted Silicon-on-Insulator (FD-SOI) devices. The electro-thermal simulator is based on a combined ensemble Monte Carlo device simulator coupled to moment expansion of the phonon Boltzmann transport equations. In particular, we stress out the importance of the temperature boundary conditions for digital and analog circuits and the use of the full model which takes into account both temperature and thickness dependence (which is particularly important for thin silicon films) of the thermal conductivity.

Original languageEnglish (US)
Title of host publication2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
Pages395-398
Number of pages4
DOIs
StatePublished - Aug 9 2010
Event2010 27th International Conference on Microelectronics, MIEL 2010 - Nis, Serbia
Duration: May 16 2010May 19 2010

Publication series

Name2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings

Other

Other2010 27th International Conference on Microelectronics, MIEL 2010
CountrySerbia
CityNis
Period5/16/105/19/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Raleva, K., Vasileska, D., & Goodnick, S. (2010). Electro-thermal modeling of nano-scale devices. In 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings (pp. 395-398). [5490455] (2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings). https://doi.org/10.1109/MIEL.2010.5490455