Abstract

In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed the electro-thermal characterization of an experimental device in terms of the simulation of its DC characteristics through an expanded full band Monte Carlo particle-based simulator self-consistently coupled to an energy balance heat equation for phonons. The accurate temperature profiles obtained for the acoustic and optical phonon modes, showed that the location of the hot spot in the channel is not at the peak of the electric field, but it is shifted towards the drain up to 34nm. Also, the modeled IdVdsVgs space is improved as a result of including the self-heating effects, which modify the charge transport in the active layer of the device through the temperature dependence of the scattering mechanisms considered in the simulations.

Original languageEnglish (US)
Title of host publication2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2017-January
ISBN (Electronic)9781509060696
DOIs
StatePublished - Dec 26 2017
Event39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 - Miami, United States
Duration: Oct 22 2017Oct 25 2017

Other

Other39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
CountryUnited States
CityMiami
Period10/22/1710/25/17

Fingerprint

High electron mobility transistors
Energy balance
high electron mobility transistors
Heating
heating
Phonons
temperature profiles
simulators
Charge transfer
phonons
simulation
Simulators
Acoustics
direct current
Electric fields
Scattering
Temperature
thermodynamics
temperature dependence
acoustics

Keywords

  • GaN
  • HEMTs
  • Monte Carlo
  • self-heating

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Latorre-Rey, A. D., Merrill, K., Albrecht, J. D., & Saraniti, M. (2017). Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 (Vol. 2017-January, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2017.8240440

Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations. / Latorre-Rey, Alvaro D.; Merrill, Ky; Albrecht, John D.; Saraniti, Marco.

2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Latorre-Rey, AD, Merrill, K, Albrecht, JD & Saraniti, M 2017, Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations. in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017, Miami, United States, 10/22/17. https://doi.org/10.1109/CSICS.2017.8240440
Latorre-Rey AD, Merrill K, Albrecht JD, Saraniti M. Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4 https://doi.org/10.1109/CSICS.2017.8240440
Latorre-Rey, Alvaro D. ; Merrill, Ky ; Albrecht, John D. ; Saraniti, Marco. / Electro-thermal characterization of GaN HEMT on Si through self-consistent energy balance-cellular Monte Carlo device simulations. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4
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