Electrically tunable and temperature compensated FBAR

Wei Pang; Hongyu Yu; Hao Zhang; Eun Sok Kim

doi:10.1109/MWSYM.2005.1516911

Electrically tunable and temperature compensated FBAR

Wei Pang, Hongyu Yu, Hao Zhang, Eun Sok Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

This paper describes the design, fabrication and measurement of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C.

Original language	English (US)
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	1279-1282
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1516911
State	Published - 2005
Externally published	Yes
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: Jun 12 2005 → Jun 17 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Other

Other	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	6/12/05 → 6/17/05

Keywords

Electrical tuning
FBAR
Surface micromachined tunable capacitor
Temperature compensation

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2005.1516911

Cite this

Pang, W, Yu, H, Zhang, H & Kim, ES 2005, Electrically tunable and temperature compensated FBAR. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1516911, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 1279-1282, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 6/12/05. https://doi.org/10.1109/MWSYM.2005.1516911

@inproceedings{e9811233e7a6401295491ebac6c6a585,

title = "Electrically tunable and temperature compensated FBAR",

abstract = "This paper describes the design, fabrication and measurement of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C.",

keywords = "Electrical tuning, FBAR, Surface micromachined tunable capacitor, Temperature compensation",

author = "Wei Pang and Hongyu Yu and Hao Zhang and Kim, {Eun Sok}",

year = "2005",

doi = "10.1109/MWSYM.2005.1516911",

language = "English (US)",

isbn = "0780388461",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "1279--1282",

booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",

note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",

}

TY - GEN

T1 - Electrically tunable and temperature compensated FBAR

AU - Pang, Wei

AU - Yu, Hongyu

AU - Zhang, Hao

AU - Kim, Eun Sok

PY - 2005

Y1 - 2005

N2 - This paper describes the design, fabrication and measurement of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C.

AB - This paper describes the design, fabrication and measurement of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C.

KW - Electrical tuning

KW - FBAR

KW - Surface micromachined tunable capacitor

KW - Temperature compensation

UR - http://www.scopus.com/inward/record.url?scp=33749250033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749250033&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2005.1516911

DO - 10.1109/MWSYM.2005.1516911

M3 - Conference contribution

AN - SCOPUS:33749250033

SN - 0780388461

SN - 9780780388468

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1279

EP - 1282

BT - 2005 IEEE MTT-S International Microwave Symposium Digest

T2 - 2005 IEEE MTT-S International Microwave Symposium

Y2 - 12 June 2005 through 17 June 2005

ER -

Electrically tunable and temperature compensated FBAR

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

Access to Document

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