Electrically injected GeSn lasers on Si operating up to 100 K

Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy, Joshua M. Grant, Sylvester Amoah, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui Qing Yu

Research output: Contribution to journalArticlepeer-review

84 Scopus citations


Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration, and significant progress in GeSn material development shows promise for such laser devices. While there are many reports focused on optically pumped lasers, in this work, we demonstrate electrically injectedGeSn lasers on Si.We grew aGeSn/SiGeSn heterostructure diode on a Si substrate in a ridge waveguide laser device and tested it under pulsed conditions, giving consideration to the structure design to enhance the carrier and optical confinement. The peak linewidth of 0.13 nm (0.06 meV) and injection current curves indicated lasing, which was observed up to 100Kwith emission peaks at 2300 nm.We recorded a threshold of 598 A=cm2 at 10 K. The peak power and external quantum efficiency were 2.7 mW/facet and 0.3%, respectively. The results indicate advances for group-IV-based lasers, which could serve as a promising route for laser integration on Si.

Original languageEnglish (US)
Pages (from-to)924-928
Number of pages5
Issue number8
StatePublished - Aug 2020

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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