Electrical properties of nanoscale tisi2 islands on si

Jaehwan Oh, Hoon Ham, Peter Laloli, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingChapter


Nanoscale TISI2 islands are formed by election beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800-1000°C). The typical island sizes were -10 run. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
StatePublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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