Electrical properties of nanoscale tisi2 islands on si

Jaehwan Oh, Hoon Ham, Peter Laloli, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Nanoscale TISI2 islands are formed by election beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800-1000°C). The typical island sizes were -10 run. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages111-116
Number of pages6
Volume583
StatePublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Oh, J., Ham, H., Laloli, P., & Nemanich, R. (2000). Electrical properties of nanoscale tisi2 islands on si. In Materials Research Society Symposium - Proceedings (Vol. 583, pp. 111-116)