Abstract
We have experimentally measured the current-voltage and capacitance-voltage characteristics of Au/amorphous AsxSe1 - x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous AsxSe1 - x (a-AsxSe1 - x) thickness of × 0.4 to × 2.8 μm does not significantly change over the entire range of applied bias (- 5 V to 5 V), indicating that the a-AsxSe1 - x films are fully depleted and thus the structures are Mott barriers. The current-voltage (I-V) characteristics of the a-As0.03Se0.97 device at low (< 3000 V/cm) to moderate fields (3000 V/cm-10000 V/cm) follow the predictions of trap limited space charge conduction theory, as they exhibit Ohmic behavior at low fields and trap limited space charge current at moderate fields. According to the trap limited space charge current model of Lampert, the a-As 0.03Se0.97 film has an effective hole mobility, Θμ (with Θ < 1), of × 5 × 10- 7 cm 2/V-sec at 295 K. This value is similar to, but consistently lower than previously reported mobilities inferred from time of flight measurements. The current at high fields (> 104 V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole-Frenkel mechanism. A permanent transition to a high conductance state (× 10- 3 S) is observed after exposure to very high electric fields (× 4 × 105V/cm).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3366-3372 |
| Number of pages | 7 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 357 |
| Issue number | 18 |
| DOIs | |
| State | Published - Sep 15 2011 |
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Keywords
- Amorphous As alloyed Se
- Electrical characteristics
- Space charge limited current
ASJC Scopus subject areas
- Condensed Matter Physics
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
Cite this
Electrical properties of AsxSe1-x (x ≤ 0.05) Mott-barriers. / Bharathan, P.; Bandyopadhyay, S.; Espinasse, M.; Singh, Rakesh; Newman, Nathan.
In: Journal of Non-Crystalline Solids, Vol. 357, No. 18, 15.09.2011, p. 3366-3372.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical properties of AsxSe1-x (x ≤ 0.05) Mott-barriers
AU - Bharathan, P.
AU - Bandyopadhyay, S.
AU - Espinasse, M.
AU - Singh, Rakesh
AU - Newman, Nathan
PY - 2011/9/15
Y1 - 2011/9/15
N2 - We have experimentally measured the current-voltage and capacitance-voltage characteristics of Au/amorphous AsxSe1 - x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous AsxSe1 - x (a-AsxSe1 - x) thickness of × 0.4 to × 2.8 μm does not significantly change over the entire range of applied bias (- 5 V to 5 V), indicating that the a-AsxSe1 - x films are fully depleted and thus the structures are Mott barriers. The current-voltage (I-V) characteristics of the a-As0.03Se0.97 device at low (< 3000 V/cm) to moderate fields (3000 V/cm-10000 V/cm) follow the predictions of trap limited space charge conduction theory, as they exhibit Ohmic behavior at low fields and trap limited space charge current at moderate fields. According to the trap limited space charge current model of Lampert, the a-As 0.03Se0.97 film has an effective hole mobility, Θμ (with Θ < 1), of × 5 × 10- 7 cm 2/V-sec at 295 K. This value is similar to, but consistently lower than previously reported mobilities inferred from time of flight measurements. The current at high fields (> 104 V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole-Frenkel mechanism. A permanent transition to a high conductance state (× 10- 3 S) is observed after exposure to very high electric fields (× 4 × 105V/cm).
AB - We have experimentally measured the current-voltage and capacitance-voltage characteristics of Au/amorphous AsxSe1 - x (x ≤ 0.05)/Zr trilayer structures at temperatures from 4 to 295 K. The observed capacitance of structures with an amorphous AsxSe1 - x (a-AsxSe1 - x) thickness of × 0.4 to × 2.8 μm does not significantly change over the entire range of applied bias (- 5 V to 5 V), indicating that the a-AsxSe1 - x films are fully depleted and thus the structures are Mott barriers. The current-voltage (I-V) characteristics of the a-As0.03Se0.97 device at low (< 3000 V/cm) to moderate fields (3000 V/cm-10000 V/cm) follow the predictions of trap limited space charge conduction theory, as they exhibit Ohmic behavior at low fields and trap limited space charge current at moderate fields. According to the trap limited space charge current model of Lampert, the a-As 0.03Se0.97 film has an effective hole mobility, Θμ (with Θ < 1), of × 5 × 10- 7 cm 2/V-sec at 295 K. This value is similar to, but consistently lower than previously reported mobilities inferred from time of flight measurements. The current at high fields (> 104 V/cm) increases rapidly with applied field as a result of carrier emission from localized states and is consistent with transport by the Poole-Frenkel mechanism. A permanent transition to a high conductance state (× 10- 3 S) is observed after exposure to very high electric fields (× 4 × 105V/cm).
KW - Amorphous As alloyed Se
KW - Electrical characteristics
KW - Space charge limited current
UR - http://www.scopus.com/inward/record.url?scp=79960916460&partnerID=8YFLogxK
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U2 - 10.1016/j.jnoncrysol.2011.06.016
DO - 10.1016/j.jnoncrysol.2011.06.016
M3 - Article
VL - 357
SP - 3366
EP - 3372
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 18
ER -