ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF2 ON Si.

L. J. Schowalter, R. W. Fathauer, F. A. Ponce, G. Anderson, Shin Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations
Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages125-133
Number of pages9
ISBN (Print)0931837332, 9780931837333
DOIs
StatePublished - Jan 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume67
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Schowalter, L. J., Fathauer, R. W., Ponce, F. A., Anderson, G., & Hashimoto, S. (1986). ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF2 ON Si. In Materials Research Society Symposia Proceedings (pp. 125-133). (Materials Research Society Symposia Proceedings; Vol. 67). Materials Research Soc. https://doi.org/10.1557/proc-67-125