ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF//2 ON Si.

L. J. Schowalter, R. W. Fathauer, F. A. Ponce, G. Anderson, Shin Hashimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

A study is made of the electrical properties and of the types of structural defects which can occur in epitaxial CaF//2 grown on Si(111) substrates by molecular beam epitaxy (MBE). High-resolution transmission electron microscopy (HRTEM) and high-energy ( greater than equivalent to 2 MeV) He ion channeling techniques are used to characterize defects in the epitaxial layer and at the CaF//2/Si interface while current-voltage (I-V) and capacitance-voltage (C-V) measurements are used to characterize the electrical properties. The HRTEM images show an atomically abrupt interface between the CaF//2 and Si. The most common defect we have been able to identify is associated with an atomic step at the interface and is similar to a Shockley partial dislocation at a (111) twin interface in an fcc crystal structure. The ion channeling measurements also indicate the presence of defects at the CaF//2/Si interface. The apparent defect density measured by ion channeling decreases in the CaF//2 layer as one moves away from the interface at a rate which depends on the final thickness of the epitaxial film. Ion channeling has also been used to measure strain.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, John M. Poate
PublisherMaterials Research Soc
Pages125-133
Number of pages9
ISBN (Print)0931837332
StatePublished - Dec 1 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume67
ISSN (Print)0272-9172

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Schowalter, L. J., Fathauer, R. W., Ponce, F. A., Anderson, G., & Hashimoto, S. (1986). ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF//2 ON Si. In J. C. C. Fan, & J. M. Poate (Eds.), Materials Research Society Symposia Proceedings (pp. 125-133). (Materials Research Society Symposia Proceedings; Vol. 67). Materials Research Soc.