Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Abhishek Motayed; Kenneth A. Jones; Michael A. Derenge; Mark C. Wood; D. N. Zakharov; Z. Liliental-Weber; David Smith; Albert V. Davydov; Wallace T. Anderson; Agis A. Iliadis; S. Noor Mohammad

doi:10.1063/1.1633660

Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Abhishek Motayed, Kenneth A. Jones, Michael A. Derenge, Mark C. Wood, D. N. Zakharov, Z. Liliental-Weber, David Smith, Albert V. Davydov, Wallace T. Anderson, Agis A. Iliadis, S. Noor Mohammad

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Abstract

Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.

Original language	English (US)
Pages (from-to)	1516-1524
Number of pages	9
Journal	Journal of Applied Physics
Volume	95
Issue number	3
DOIs	https://doi.org/10.1063/1.1633660
State	Published - Feb 1 2004

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1633660

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title = "Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN",

abstract = "Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.",

author = "Abhishek Motayed and Jones, {Kenneth A.} and Derenge, {Michael A.} and Wood, {Mark C.} and Zakharov, {D. N.} and Z. Liliental-Weber and David Smith and Davydov, {Albert V.} and Anderson, {Wallace T.} and Iliadis, {Agis A.} and Mohammad, {S. Noor}",

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TY - JOUR

T1 - Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

AU - Motayed, Abhishek

AU - Jones, Kenneth A.

AU - Derenge, Michael A.

AU - Wood, Mark C.

AU - Zakharov, D. N.

AU - Liliental-Weber, Z.

AU - Smith, David

AU - Davydov, Albert V.

AU - Anderson, Wallace T.

AU - Iliadis, Agis A.

AU - Mohammad, S. Noor

PY - 2004/2/1

Y1 - 2004/2/1

N2 - Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.

AB - Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.

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Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Abstract

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