Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Abhishek Motayed, Kenneth A. Jones, Michael A. Derenge, Mark C. Wood, D. N. Zakharov, Z. Liliental-Weber, David Smith, Albert V. Davydov, Wallace T. Anderson, Agis A. Iliadis, S. Noor Mohammad

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.

Original languageEnglish (US)
Pages (from-to)1516-1524
Number of pages9
JournalJournal of Applied Physics
Volume95
Issue number3
DOIs
StatePublished - Feb 1 2004

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electric contacts
thermal stability
annealing
alloying
solid solutions
transmission electron microscopy
microstructure
profiles
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Motayed, A., Jones, K. A., Derenge, M. A., Wood, M. C., Zakharov, D. N., Liliental-Weber, Z., ... Mohammad, S. N. (2004). Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN. Journal of Applied Physics, 95(3), 1516-1524. https://doi.org/10.1063/1.1633660

Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN. / Motayed, Abhishek; Jones, Kenneth A.; Derenge, Michael A.; Wood, Mark C.; Zakharov, D. N.; Liliental-Weber, Z.; Smith, David; Davydov, Albert V.; Anderson, Wallace T.; Iliadis, Agis A.; Mohammad, S. Noor.

In: Journal of Applied Physics, Vol. 95, No. 3, 01.02.2004, p. 1516-1524.

Research output: Contribution to journalArticle

Motayed, A, Jones, KA, Derenge, MA, Wood, MC, Zakharov, DN, Liliental-Weber, Z, Smith, D, Davydov, AV, Anderson, WT, Iliadis, AA & Mohammad, SN 2004, 'Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN', Journal of Applied Physics, vol. 95, no. 3, pp. 1516-1524. https://doi.org/10.1063/1.1633660
Motayed A, Jones KA, Derenge MA, Wood MC, Zakharov DN, Liliental-Weber Z et al. Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN. Journal of Applied Physics. 2004 Feb 1;95(3):1516-1524. https://doi.org/10.1063/1.1633660
Motayed, Abhishek ; Jones, Kenneth A. ; Derenge, Michael A. ; Wood, Mark C. ; Zakharov, D. N. ; Liliental-Weber, Z. ; Smith, David ; Davydov, Albert V. ; Anderson, Wallace T. ; Iliadis, Agis A. ; Mohammad, S. Noor. / Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 3. pp. 1516-1524.
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