Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

Abhishek Motayed, Kenneth A. Jones, Michael A. Derenge, Mark C. Wood, D. N. Zakharov, Z. Liliental-Weber, David Smith, Albert V. Davydov, Wallace T. Anderson, Agis A. Iliadis, S. Noor Mohammad

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13 Scopus citations

Abstract

Both the AES depth profile and TEM images for the annealed contacts show that Ni performed poorly as a diffusion barrier. It could not prevent inward diffusion of the top Au layer into the Ta/Ti bilayer, and also into the n-GaN epilayer underneath it, during rapid thermal annealing (RTA). As a result, thermal alloying at elevated temperatures led to the formation of several Au-based solid solutions embedded on the GaN epilayer and on other parts of the microstructure. Thus, it was revealed that, upon RTA, the n-GaN/Ta/Ti/Ni/Au system yielded the alloy in the vicinity of the metal/n-GaN interface.

Original languageEnglish (US)
Pages (from-to)1516-1524
Number of pages9
JournalJournal of Applied Physics
Volume95
Issue number3
DOIs
StatePublished - Feb 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Motayed, A., Jones, K. A., Derenge, M. A., Wood, M. C., Zakharov, D. N., Liliental-Weber, Z., Smith, D., Davydov, A. V., Anderson, W. T., Iliadis, A. A., & Mohammad, S. N. (2004). Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN. Journal of Applied Physics, 95(3), 1516-1524. https://doi.org/10.1063/1.1633660