Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates

P. Roitman, M. Edelstein, Stephen Krause

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages167-168
Number of pages2
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
Duration: Oct 5 1998Oct 8 1998

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period10/5/9810/8/98

Fingerprint

Precipitates
Pipe
Defects
Oxides
Silicon
Oxygen
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Roitman, P., Edelstein, M., & Krause, S. (1998). Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates. In Anon (Ed.), IEEE International SOI Conference (pp. 167-168). Piscataway, NJ, United States: IEEE.

Electrical detection of defects in SIMOX buried oxides : Pipes and precipitates. / Roitman, P.; Edelstein, M.; Krause, Stephen.

IEEE International SOI Conference. ed. / Anon. Piscataway, NJ, United States : IEEE, 1998. p. 167-168.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Roitman, P, Edelstein, M & Krause, S 1998, Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates. in Anon (ed.), IEEE International SOI Conference. IEEE, Piscataway, NJ, United States, pp. 167-168, Proceedings of the 1998 IEEE International SOI Conference, Stuart, FL, USA, 10/5/98.
Roitman P, Edelstein M, Krause S. Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates. In Anon, editor, IEEE International SOI Conference. Piscataway, NJ, United States: IEEE. 1998. p. 167-168
Roitman, P. ; Edelstein, M. ; Krause, Stephen. / Electrical detection of defects in SIMOX buried oxides : Pipes and precipitates. IEEE International SOI Conference. editor / Anon. Piscataway, NJ, United States : IEEE, 1998. pp. 167-168
@inproceedings{d36538e6330d44f890d0753e1678f3ad,
title = "Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates",
abstract = "Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.",
author = "P. Roitman and M. Edelstein and Stephen Krause",
year = "1998",
language = "English (US)",
pages = "167--168",
editor = "Anon",
booktitle = "IEEE International SOI Conference",
publisher = "IEEE",

}

TY - GEN

T1 - Electrical detection of defects in SIMOX buried oxides

T2 - Pipes and precipitates

AU - Roitman, P.

AU - Edelstein, M.

AU - Krause, Stephen

PY - 1998

Y1 - 1998

N2 - Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

AB - Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

UR - http://www.scopus.com/inward/record.url?scp=0032313878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032313878&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032313878

SP - 167

EP - 168

BT - IEEE International SOI Conference

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -