Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates

P. Roitman; M. Edelstein; Stephen Krause

Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates

P. Roitman, M. Edelstein, Stephen Krause

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO₂ system at high temperature to separate into regions of Si and SiO₂ rather than forming SiO_x. Below an oxygen dose of approximately 4×10¹⁷ cm^-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO₂ precipitates. Above the dose of approximately 4×10¹⁷ cm^-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

Original language	English (US)
Title of host publication	IEEE International SOI Conference
Editors	Anon
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	167-168
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: Oct 5 1998 → Oct 8 1998

Other

Other	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	10/5/98 → 10/8/98

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{d36538e6330d44f890d0753e1678f3ad,

title = "Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates",

abstract = "Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.",

author = "P. Roitman and M. Edelstein and Stephen Krause",

year = "1998",

language = "English (US)",

pages = "167--168",

editor = "Anon",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

}

TY - GEN

T1 - Electrical detection of defects in SIMOX buried oxides

T2 - Proceedings of the 1998 IEEE International SOI Conference

AU - Roitman, P.

AU - Edelstein, M.

AU - Krause, Stephen

PY - 1998

Y1 - 1998

N2 - Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

AB - Two defect types are identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO2 system at high temperature to separate into regions of Si and SiO2 rather than forming SiOx. Below an oxygen dose of approximately 4×1017 cm-2, the buried oxide is not continuous, and as the dose is lowered the implanted region becomes a layer of SiO2 precipitates. Above the dose of approximately 4×1017 cm-2, the buried oxide is continuous, but Si precipitates approximately 50 nm thick are present in the oxide.

UR - http://www.scopus.com/inward/record.url?scp=0032313878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032313878&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032313878

SP - 167

EP - 168

BT - IEEE International SOI Conference

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

Y2 - 5 October 1998 through 8 October 1998

ER -

Electrical detection of defects in SIMOX buried oxides: Pipes and precipitates

Abstract

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ASJC Scopus subject areas

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