TY - JOUR
T1 - Electrical contact properties of semiconducting chalcogenide glasses
AU - Wallace, A. M.
AU - Owen, A. E.
AU - Robertson, J. M.
PY - 1978/7
Y1 - 1978/7
N2 - Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.
AB - Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.
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U2 - 10.1080/13642817808245320
DO - 10.1080/13642817808245320
M3 - Article
AN - SCOPUS:0017985087
VL - 38
SP - 57
EP - 70
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
SN - 1364-2812
IS - 1
ER -