Abstract
Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 57-70 |
| Number of pages | 14 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1978 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Chemical Engineering(all)
- Physics and Astronomy(all)
Cite this
Electrical contact properties of semiconducting chalcogenide glasses. / Wallace, A. M.; Owen, A. E.; Robertson, J. M.
In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 38, No. 1, 1978, p. 57-70.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electrical contact properties of semiconducting chalcogenide glasses
AU - Wallace, A. M.
AU - Owen, A. E.
AU - Robertson, J. M.
PY - 1978
Y1 - 1978
N2 - Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.
AB - Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.
UR - http://www.scopus.com/inward/record.url?scp=0017985087&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0017985087&partnerID=8YFLogxK
U2 - 10.1080/13642817808245320
DO - 10.1080/13642817808245320
M3 - Article
AN - SCOPUS:0017985087
VL - 38
SP - 57
EP - 70
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
SN - 1364-2812
IS - 1
ER -