Electrical contact properties of semiconducting chalcogenide glasses

A. M. Wallace, A. E. Owen, J. M. Robertson

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Measurements of the d.c. conductivity of radio-frequency sputtered thin films of a Ge-As-Te chalcogenide glass, sandwiched between a variety of metallic electrodes, indicate the absence of any blocking barrier associated with the metal-amorphous semiconductor contact, except when an oxidizing electrode such as Al is used. These results are confirmed by measurements of the capacitance and a.c. conductance as a function of frequency and are analysed in terms of a model of the metal-amorphous semiconductor contact in which transport occurs by a parallel combination of thermionic field emission, band-to-band recombination/generation via localized gap states, and tunnelling at the Fermi level followed by thermal excitation into the conduction band. Calculations show that recombination/generation is the dominant mechanism of transport across the contact.

Original languageEnglish (US)
Pages (from-to)57-70
Number of pages14
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume38
Issue number1
DOIs
StatePublished - Jul 1978

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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