Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD

B. R. Stoner, J. T. Glass, L. Bergman, Robert Nemanich, L. D. Zoltal, J. W. Vandersande

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Electrical conductivity measurements and photoluminescence (PL) were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000° C and then complimented with Raman spectroscopy and PL studies in an attempt to gain a better understanding of the CVD growth process and the resulting electrical and optical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, while only moderate changes were observed in the luminescence spectra.

Original languageEnglish (US)
Pages (from-to)629-634
Number of pages6
JournalJournal of Electronic Materials
Volume21
Issue number6
DOIs
StatePublished - Jun 1992
Externally publishedYes

Fingerprint

Plasma CVD
Diamond films
diamond films
Photoluminescence
Microwaves
vapor deposition
photoluminescence
Plasmas
microwaves
Chemical vapor deposition
electrical resistivity
luminescence
Diamond
Carrier transport
room temperature
Transport properties
Raman spectroscopy
Luminescence
Diamonds
Electric properties

Keywords

  • Diamond
  • electrical conductivity
  • photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD. / Stoner, B. R.; Glass, J. T.; Bergman, L.; Nemanich, Robert; Zoltal, L. D.; Vandersande, J. W.

In: Journal of Electronic Materials, Vol. 21, No. 6, 06.1992, p. 629-634.

Research output: Contribution to journalArticle

Stoner, B. R. ; Glass, J. T. ; Bergman, L. ; Nemanich, Robert ; Zoltal, L. D. ; Vandersande, J. W. / Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD. In: Journal of Electronic Materials. 1992 ; Vol. 21, No. 6. pp. 629-634.
@article{f886f6d8c7334bc4ad66a01a3531b842,
title = "Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD",
abstract = "Electrical conductivity measurements and photoluminescence (PL) were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000° C and then complimented with Raman spectroscopy and PL studies in an attempt to gain a better understanding of the CVD growth process and the resulting electrical and optical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, while only moderate changes were observed in the luminescence spectra.",
keywords = "Diamond, electrical conductivity, photoluminescence",
author = "Stoner, {B. R.} and Glass, {J. T.} and L. Bergman and Robert Nemanich and Zoltal, {L. D.} and Vandersande, {J. W.}",
year = "1992",
month = "6",
doi = "10.1007/BF02655431",
language = "English (US)",
volume = "21",
pages = "629--634",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD

AU - Stoner, B. R.

AU - Glass, J. T.

AU - Bergman, L.

AU - Nemanich, Robert

AU - Zoltal, L. D.

AU - Vandersande, J. W.

PY - 1992/6

Y1 - 1992/6

N2 - Electrical conductivity measurements and photoluminescence (PL) were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000° C and then complimented with Raman spectroscopy and PL studies in an attempt to gain a better understanding of the CVD growth process and the resulting electrical and optical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, while only moderate changes were observed in the luminescence spectra.

AB - Electrical conductivity measurements and photoluminescence (PL) were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000° C and then complimented with Raman spectroscopy and PL studies in an attempt to gain a better understanding of the CVD growth process and the resulting electrical and optical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, while only moderate changes were observed in the luminescence spectra.

KW - Diamond

KW - electrical conductivity

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0026883670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026883670&partnerID=8YFLogxK

U2 - 10.1007/BF02655431

DO - 10.1007/BF02655431

M3 - Article

AN - SCOPUS:0026883670

VL - 21

SP - 629

EP - 634

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -