Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Thomas R. Harris, Mee Yi Ryu, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.

Original languageEnglish (US)
JournalCurrent Applied Physics
Volume14
Issue numberSUPPL. 1
DOIs
StatePublished - Mar 14 2014

Fingerprint

Electric properties
Substrates
Scattering
Lattice mismatch
Epitaxial films
electrical properties
Epitaxial layers
Hall effect
Ultrahigh vacuum
conduction
conductivity
Temperature
Chemical vapor deposition
scattering
ultrahigh vacuum
temperature
Thin films
Defects
vapor deposition
defects

Keywords

  • Conductivity type conversion
  • Degenerate conducting layer
  • Germanium-tin alloys
  • Hall-effect measurement
  • Ultra-high vacuum chemical vapor deposition

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates. / Harris, Thomas R.; Ryu, Mee Yi; Yeo, Yung Kee; Beeler, Richard T.; Kouvetakis, John.

In: Current Applied Physics, Vol. 14, No. SUPPL. 1, 14.03.2014.

Research output: Contribution to journalArticle

Harris, Thomas R. ; Ryu, Mee Yi ; Yeo, Yung Kee ; Beeler, Richard T. ; Kouvetakis, John. / Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates. In: Current Applied Physics. 2014 ; Vol. 14, No. SUPPL. 1.
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AB - The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.

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