TY - JOUR
T1 - Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
AU - Harris, Thomas R.
AU - Ryu, Mee Yi
AU - Yeo, Yung Kee
AU - Beeler, Richard T.
AU - Kouvetakis, John
N1 - Funding Information:
The authors would like to thank Dr. Gernot S. Pomrenke of the Air Force Office of Scientific Research for supporting this work. This research was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2010-0021555 ).
PY - 2014/3/14
Y1 - 2014/3/14
N2 - The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.
AB - The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.
KW - Conductivity type conversion
KW - Degenerate conducting layer
KW - Germanium-tin alloys
KW - Hall-effect measurement
KW - Ultra-high vacuum chemical vapor deposition
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U2 - 10.1016/j.cap.2013.11.009
DO - 10.1016/j.cap.2013.11.009
M3 - Article
AN - SCOPUS:84899412501
VL - 14
SP - S123-S128
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - SUPPL. 1
ER -