Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Thomas R. Harris; Mee Yi Ryu; Yung Kee Yeo; Richard T. Beeler; John Kouvetakis

doi:10.1016/j.cap.2013.11.009

Electrical characterization studies of p-type Ge, Ge_1-ySn _y, and Si_0.09Ge_0.882Sn_0.028 grown on n-Si substrates

Thomas R. Harris, Mee Yi Ryu, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The electrical properties of p-type Ge, Ge_1-ySn_y, and Si_0.09Ge_0.882Sn_0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge_1-ySn_y/Si, and Si _0.09Ge_0.882Sn_0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.

Original language	English (US)
Pages (from-to)	S123-S128
Journal	Current Applied Physics
Volume	14
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2013.11.009
State	Published - Mar 14 2014

Keywords

Conductivity type conversion
Degenerate conducting layer
Germanium-tin alloys
Hall-effect measurement
Ultra-high vacuum chemical vapor deposition

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2013.11.009

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title = "Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates",

abstract = "The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.",

keywords = "Conductivity type conversion, Degenerate conducting layer, Germanium-tin alloys, Hall-effect measurement, Ultra-high vacuum chemical vapor deposition",

author = "Harris, {Thomas R.} and Ryu, {Mee Yi} and Yeo, {Yung Kee} and Beeler, {Richard T.} and John Kouvetakis",

year = "2014",

month = mar,

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doi = "10.1016/j.cap.2013.11.009",

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AU - Harris, Thomas R.

AU - Ryu, Mee Yi

AU - Yeo, Yung Kee

AU - Beeler, Richard T.

AU - Kouvetakis, John

PY - 2014/3/14

Y1 - 2014/3/14

N2 - The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.

AB - The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si 0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.

KW - Conductivity type conversion

KW - Degenerate conducting layer

KW - Germanium-tin alloys

KW - Hall-effect measurement

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