Electrical characterization of thermally-formed nickel silicide for nickel-copper plated solar cell contacts

Joseph Karas, Sangpyeong Kim, Lynne Michaelson, Krystal Munoz, Tom Tyson, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Plated copper is being considered as an alternative to screenprinted silver for the front contacts of crystalline silicon solar cells. Generally, a thin nickel layer, annealed to form nickel silicide is used to improve contact resistance and adhesion of the contact to silicon. Nickel layers can also be used to prevent the detrimental diffusion of copper into the cell. One challenge to the commercialization of plated copper contacts is the potential for this nickel barrier to fail, causing catastrophic local electrical shunts of the cell. In this work, we monitor shunting during a thermal stress test to evaluate the adequacy of nickel diffusion barrier layers and identify different mechanisms by which Ni-Cu plated cells may become shunted.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Publication series

Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period6/14/156/19/15

Keywords

  • Suns-VOC
  • copper
  • lock-in thermography
  • nickel
  • plating
  • shunting

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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