Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

S. M. Shibli, M. C. Tamargo, J. L. De Miguel, B. J. Skromme, R. E. Nahory, H. H. Farrell

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Abstract

We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.

Original languageEnglish (US)
Pages (from-to)4295-4300
Number of pages6
JournalJournal of Applied Physics
Volume66
Issue number9
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B. J., Nahory, R. E., & Farrell, H. H. (1989). Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics, 66(9), 4295-4300. https://doi.org/10.1063/1.343974