Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

S. M. Shibli, M. C. Tamargo, J. L. De Miguel, Brian Skromme, R. E. Nahory, H. H. Farrell

Research output: Contribution to journalArticle

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Abstract

We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.

Original languageEnglish (US)
Pages (from-to)4295-4300
Number of pages6
JournalJournal of Applied Physics
Volume66
Issue number9
DOIs
StatePublished - 1989
Externally publishedYes

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gallium
molecular beam epitaxy
impurities
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B., Nahory, R. E., & Farrell, H. H. (1989). Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics, 66(9), 4295-4300. https://doi.org/10.1063/1.343974

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy. / Shibli, S. M.; Tamargo, M. C.; De Miguel, J. L.; Skromme, Brian; Nahory, R. E.; Farrell, H. H.

In: Journal of Applied Physics, Vol. 66, No. 9, 1989, p. 4295-4300.

Research output: Contribution to journalArticle

Shibli, SM, Tamargo, MC, De Miguel, JL, Skromme, B, Nahory, RE & Farrell, HH 1989, 'Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy', Journal of Applied Physics, vol. 66, no. 9, pp. 4295-4300. https://doi.org/10.1063/1.343974
Shibli, S. M. ; Tamargo, M. C. ; De Miguel, J. L. ; Skromme, Brian ; Nahory, R. E. ; Farrell, H. H. / Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 9. pp. 4295-4300.
@article{8cad92a870c54b5d9f0bf2e83bf269db,
title = "Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy",
abstract = "We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.",
author = "Shibli, {S. M.} and Tamargo, {M. C.} and {De Miguel}, {J. L.} and Brian Skromme and Nahory, {R. E.} and Farrell, {H. H.}",
year = "1989",
doi = "10.1063/1.343974",
language = "English (US)",
volume = "66",
pages = "4295--4300",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

AU - Shibli, S. M.

AU - Tamargo, M. C.

AU - De Miguel, J. L.

AU - Skromme, Brian

AU - Nahory, R. E.

AU - Farrell, H. H.

PY - 1989

Y1 - 1989

N2 - We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.

AB - We report electrical characterization of a series of ZnSe samples which are planar doped by a new approach to doping involving periodic deposition of sheets of Ga on Zn- or Se-rich surfaces. For samples planar doped on Zn-rich surfaces, the mobility could be described by ionized-impurity scattering and polar optical-phonon scattering mechanisms, while planar-doped samples on Se-rich surfaces and uniformly doped samples require additional scattering mechanisms to describe their mobilities. The latter two cases give higher mobilities than the first, a result which is in conflict with the fact that the latter have higher total ionized-impurity concentrations and compensation. These results of higher mobilities along with higher total ionized-impurity concentrations are interpreted as evidence of donor-acceptor pair formation.

UR - http://www.scopus.com/inward/record.url?scp=0037727439&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037727439&partnerID=8YFLogxK

U2 - 10.1063/1.343974

DO - 10.1063/1.343974

M3 - Article

AN - SCOPUS:0037727439

VL - 66

SP - 4295

EP - 4300

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -