Electrical characterization and deep-level transient spectroscopy of Ge_0.873Si_0.104Sn_0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Engineering & Materials Science

• Deep level transient spectroscopy 100%
• Conduction bands 95%
• Ultrahigh vacuum 88%
• Capacitance measurement 81%
• Voltage measurement 70%
• Photodiodes 69%
• Chemical vapor deposition 65%
• Electron energy levels 65%
• Hole traps 55%
• Electron traps 52%
• Valence bands 50%
• Dark currents 42%
• Secondary ion mass spectrometry 42%
• Leakage currents 30%
• Activation energy 29%
• Diodes 25%
• Temperature 22%

Physics & Astronomy

• ultrahigh vacuum 56%
• electrical measurement 54%
• photodiodes 51%
• conduction bands 48%
• platforms 47%
• energy levels 45%
• capacitance 44%
• vapor deposition 43%
• traps 42%
• characterization 31%
• spectroscopy 29%
• dark current 29%
• secondary ion mass spectrometry 28%
• leakage 23%
• diodes 21%
• activation energy 20%
• valence 20%
• profiles 15%
• electrons 11%
• temperature 8%

Chemical Compounds

• Deep Level Transient Spectroscopy 94%
• Conduction Band 60%
• Chemical Vapour Deposition 50%
• Hole Trap 44%
• Vacuum 44%
• Electron Trap 39%
• Leakage Current 37%
• Valence Band 31%
• Secondary Ion Mass Spectroscopy 30%
• Energy 26%
• Reaction Activation Energy 19%
• Liquid Film 13%