Abstract
Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.
Original language | English (US) |
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Pages (from-to) | 77-84 |
Number of pages | 8 |
Journal | Thin Solid Films |
Volume | 654 |
DOIs | |
State | Published - May 31 2018 |
Keywords
- Chemical vapor deposition
- Deep-level trap spectroscopy
- Electrical characterization
- Germanium‑silicon‑tin
- Group IV semiconductor
- Photodiode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry