Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Buguo Wang, Z. Q. Fang, Bruce Claflin, David Look, John Kouvetakis, Yung Kee Yeo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.

Original languageEnglish (US)
Pages (from-to)77-84
Number of pages8
JournalThin Solid Films
Volume654
DOIs
StatePublished - May 31 2018

Fingerprint

Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Ultrahigh vacuum
Photodiodes
Conduction bands
Electron energy levels
electrical measurement
ultrahigh vacuum
photodiodes
Chemical vapor deposition
conduction bands
platforms
capacitance
energy levels
traps
vapor deposition
Hole traps
Electron traps
Dark currents

Keywords

  • Chemical vapor deposition
  • Deep-level trap spectroscopy
  • Electrical characterization
  • Germanium‑silicon‑tin
  • Group IV semiconductor
  • Photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition. / Wang, Buguo; Fang, Z. Q.; Claflin, Bruce; Look, David; Kouvetakis, John; Yeo, Yung Kee.

In: Thin Solid Films, Vol. 654, 31.05.2018, p. 77-84.

Research output: Contribution to journalArticle

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abstract = "Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.",
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AU - Fang, Z. Q.

AU - Claflin, Bruce

AU - Look, David

AU - Kouvetakis, John

AU - Yeo, Yung Kee

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N2 - Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.

AB - Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.

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