Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Buguo Wang, Z. Q. Fang, Bruce Claflin, David Look, John Kouvetakis, Yung Kee Yeo

Research output: Contribution to journalArticle

3 Scopus citations


Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of Edc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at ~100 K and at ~165 K with energy levels at ~0.09 eV and ~0.36 eV from the conduction band, respectively; and at least one hole trap at ~275 K with energy level at ~0.61 eV from the valence band (~0.33 eV from the conduction band) existing in the device.

Original languageEnglish (US)
Pages (from-to)77-84
Number of pages8
JournalThin Solid Films
StatePublished - May 31 2018



  • Chemical vapor deposition
  • Deep-level trap spectroscopy
  • Electrical characterization
  • Germanium‑silicon‑tin
  • Group IV semiconductor
  • Photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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