Abstract

A Monte Carlo device simulation tool has been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator (SOI) devices. A comparison of the mobility and peak velocity overshoot has been performed between strained and unstrained Si devices. The effects of different types of materials for buried oxide layers (BOX) have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.

Original languageEnglish (US)
Title of host publicationInternational Conference and Exhibition on Device Packaging 2014
PublisherInternational Microelectronics and Packaging Society, Nordic
Pages382-385
Number of pages4
ISBN (Print)9781632665812
Publication statusPublished - 2014
EventIMAPS International Conference and Exhibition on Device Packaging 2014, in Conjunction with the Global Business Council, GBC Spring Conference - Scottsdale/Fountain Hills, AZ, United States
Duration: Mar 10 2014Mar 13 2014

Other

OtherIMAPS International Conference and Exhibition on Device Packaging 2014, in Conjunction with the Global Business Council, GBC Spring Conference
CountryUnited States
CityScottsdale/Fountain Hills, AZ
Period3/10/143/13/14

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Keywords

  • Monte Carlo
  • Particle based device simulator
  • Selfheating effects
  • Silicon on insulator
  • Thermal effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Qazi, S., Raleva, K., & Vasileska, D. (2014). Electrical and thermal transport in alternative device technologies. In International Conference and Exhibition on Device Packaging 2014 (pp. 382-385). International Microelectronics and Packaging Society, Nordic.