Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells

R. A. Kiehl, P. E. Batson, J. O. Chu, D. C. Edelstein, F. F. Fang, B. Laikhtman, D. R. Lombardi, W. T. Masselink, B. S. Meyerson, J. J. Nocera, A. H. Parsons, C. L. Stanis, J. C. Tsang

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