Abstract

CdTe/Mg 0.46Cd 0.54Te double heterostructures with n-type In doping concentrations, varied from 1 × 1016 to 7 × 1018 cm−3, have been grown on InSb substrates using molecular beam epitaxy. Secondary ion mass spectroscopy measurements show strong diffusion of In from the InSb substrate to the CdTe buffer layer, while the In concentration is constant in the CdTe layer between the two Mg 0.46Cd 0.54Te barrier layers. Capacitance–voltage measurements show that the dopants are 100% ionized for the doping concentration range from 1 × 1016 to 1 × 1018 cm−3. The carrier lifetime decreases with increasing doping concentration (from 0.73 μs for an unintentionally doped sample to 0.74 ns for a 1 × 1018 cm−3 doped sample) due to the decrease of both radiative and nonradiative lifetimes. Decent carrier lifetimes are achieved (∼100 ns) between 1 × 1016 and 1 × 1017 cm−3 doping levels, which is beneficial for developing n-type monocrystalline CdTe solar cells, photodetectors, and other optoelectronic devices. The strongest photoluminescence intensity is observed when the doping concentration is 1 × 1017 cm−3, which corresponds to the highest internal quantum efficiency.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Jan 18 2016

Fingerprint

Indium
indium
Heterojunctions
Electric properties
Optical properties
electrical properties
Doping (additives)
optical properties
carrier lifetime
Carrier lifetime
radiative lifetime
barrier layers
optoelectronic devices
Substrates
photometers
Buffer layers
quantum efficiency
Photodetectors
Quantum efficiency
Molecular beam epitaxy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg 0.46Cd 0.54Te Double Heterostructures. / Zhao, Xin Hao; Liu, Shi; Zhao, Yuan; Campbell, Calli M.; Lassise, Maxwell B.; Kuo, Ying Shen; Zhang, Yong-Hang.

In: IEEE Journal of Photovoltaics, 18.01.2016.

Research output: Contribution to journalArticle

Zhao, Xin Hao ; Liu, Shi ; Zhao, Yuan ; Campbell, Calli M. ; Lassise, Maxwell B. ; Kuo, Ying Shen ; Zhang, Yong-Hang. / Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg 0.46Cd 0.54Te Double Heterostructures. In: IEEE Journal of Photovoltaics. 2016.
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