Abstract

Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around φ Beff = 0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7224
DOIs
StatePublished - 2009
EventQuantum Dots, Particles, and Nanoclusters VI - San Jose, CA, United States
Duration: Jan 25 2009Jan 28 2009

Other

OtherQuantum Dots, Particles, and Nanoclusters VI
CountryUnited States
CitySan Jose, CA
Period1/25/091/28/09

Keywords

  • Gallium antimonides
  • Nanowires
  • Schottky barrier
  • Transistors

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Xu, W., Chin, A., Ye, L., Ning, C-Z., & Yu, H. (2009). Electrical and optical characterization of individual GaSb nanowires. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7224). [72240G] https://doi.org/10.1117/12.816931