Abstract
Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3 orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb property before and after the transport study. The temperature dependent current-voltage characteristic shows asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire. Arrhenius plots revealed effective Schottky barrier heights around φ Beff = 0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 7224 |
DOIs | |
State | Published - 2009 |
Event | Quantum Dots, Particles, and Nanoclusters VI - San Jose, CA, United States Duration: Jan 25 2009 → Jan 28 2009 |
Other
Other | Quantum Dots, Particles, and Nanoclusters VI |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/25/09 → 1/28/09 |
Keywords
- Gallium antimonides
- Nanowires
- Schottky barrier
- Transistors
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics