The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.
ASJC Scopus subject areas
- Physics and Astronomy(all)