Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

K. M. Tracy, P. J. Hartlieb, S. Einfeldt, R. F. Davis, E. H. Hurt, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

89 Scopus citations

Abstract

The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.

Original languageEnglish (US)
Pages (from-to)3939-3948
Number of pages10
JournalJournal of Applied Physics
Volume94
Issue number6
DOIs
StatePublished - Sep 15 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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