Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

K. M. Tracy; P. J. Hartlieb; S. Einfeldt; R. F. Davis; E. H. Hurt; R. J. Nemanich

doi:10.1063/1.1598630

Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

K. M. Tracy, P. J. Hartlieb, S. Einfeldt, R. F. Davis, E. H. Hurt, R. J. Nemanich

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Abstract

The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.

Original language	English (US)
Pages (from-to)	3939-3948
Number of pages	10
Journal	Journal of Applied Physics
Volume	94
Issue number	6
DOIs	https://doi.org/10.1063/1.1598630
State	Published - Sep 15 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag",

abstract = "The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.",

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T1 - Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

AU - Tracy, K. M.

AU - Hartlieb, P. J.

AU - Einfeldt, S.

AU - Davis, R. F.

AU - Hurt, E. H.

AU - Nemanich, R. J.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.

AB - The electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(001) surfaces and Pt, Au, and Ag was discussed. The Schottky barrier heights were determined and were found to be within the experimental error for each contact metal and had the values of 1.2±0.1, 0.9±0.1 and 0.6±0.1 eV for Pt, Au, and Ag respectively. The barrier height was found to be proportional to the metal work function which indicated that the Fermi level was not pinned at the GaN surface.

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JF - Journal of Applied Physics

IS - 6

ER -

Electrical and chemical characterization of the schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

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