ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON.

Anjan Bhattacharyya, Venkatraman Iyer, Ben G. Streetman, Judith E. Baker, Peter Williams

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Results of experiments studying the electrical activation and impurity redistribution during annealing of BF//2** plus implanted amorphized silicon with a Q-switched Nd:glass laser ( lambda equals 1. 06 mu m) of 27. 5 nm full-width half-maximum (FWHM) are presented. The experimental results are explained on the basis of a thermal melting model.

Original languageEnglish (US)
Pages (from-to)425-428
Number of pages4
JournalIEEE transactions on components, hybrids, and manufacturing technology
VolumeCHMT-4
StatePublished - Dec 1981
Externally publishedYes

Fingerprint

Q switched lasers
Glass lasers
Silicon
Pulsed lasers
Melting
Chemical activation
Annealing
Impurities
Experiments
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON. / Bhattacharyya, Anjan; Iyer, Venkatraman; Streetman, Ben G.; Baker, Judith E.; Williams, Peter.

In: IEEE transactions on components, hybrids, and manufacturing technology, Vol. CHMT-4, 12.1981, p. 425-428.

Research output: Contribution to journalArticle

@article{6bdbce67e3e642b2a6423b56de8610d1,
title = "ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON.",
abstract = "Results of experiments studying the electrical activation and impurity redistribution during annealing of BF//2** plus implanted amorphized silicon with a Q-switched Nd:glass laser ( lambda equals 1. 06 mu m) of 27. 5 nm full-width half-maximum (FWHM) are presented. The experimental results are explained on the basis of a thermal melting model.",
author = "Anjan Bhattacharyya and Venkatraman Iyer and Streetman, {Ben G.} and Baker, {Judith E.} and Peter Williams",
year = "1981",
month = "12",
language = "English (US)",
volume = "CHMT-4",
pages = "425--428",
journal = "IEEE Transactions on Components, Hybrids and Manufacturing Technology",
issn = "0148-6411",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON.

AU - Bhattacharyya, Anjan

AU - Iyer, Venkatraman

AU - Streetman, Ben G.

AU - Baker, Judith E.

AU - Williams, Peter

PY - 1981/12

Y1 - 1981/12

N2 - Results of experiments studying the electrical activation and impurity redistribution during annealing of BF//2** plus implanted amorphized silicon with a Q-switched Nd:glass laser ( lambda equals 1. 06 mu m) of 27. 5 nm full-width half-maximum (FWHM) are presented. The experimental results are explained on the basis of a thermal melting model.

AB - Results of experiments studying the electrical activation and impurity redistribution during annealing of BF//2** plus implanted amorphized silicon with a Q-switched Nd:glass laser ( lambda equals 1. 06 mu m) of 27. 5 nm full-width half-maximum (FWHM) are presented. The experimental results are explained on the basis of a thermal melting model.

UR - http://www.scopus.com/inward/record.url?scp=0019659223&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019659223&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0019659223

VL - CHMT-4

SP - 425

EP - 428

JO - IEEE Transactions on Components, Hybrids and Manufacturing Technology

JF - IEEE Transactions on Components, Hybrids and Manufacturing Technology

SN - 0148-6411

ER -