ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON.

Anjan Bhattacharyya, V. Iyer, B. G. Streetman, J. E. Baker, Peter Williams

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Results of experiments are presented to study the electrical activation and impurity redistribution during annealing of BF//2** plus implanted amorphized silicon with a Q-switched Nd:glass laser ( lambda equals 1. 06 mu m) of 27. 5 ns FWHM. The results are explained based on a thermal melting model. The laser fluence necessary to initiate melting of the front surface was determined using time-resolved reflectivity measurements. Samples were investigated that were irradiated with laser fluences just below the melting threshold and with higher fluences producing melting to successively deeper regions inside the material. It was found that for full electrical activation the laser fluence should be large enough to melt past the original amorphous-crystalline interface and the underlying damaged layer, leading to liquid phase epitaxial regrowth and approximately 100% electrical activation.

Original languageEnglish (US)
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherIEEE
Pages104-108
Number of pages5
StatePublished - 1981
Externally publishedYes
EventProc Electron Components Conf 31st - Atlanta, Ga
Duration: May 11 1981May 13 1981

Other

OtherProc Electron Components Conf 31st
CityAtlanta, Ga
Period5/11/815/13/81

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bhattacharyya, A., Iyer, V., Streetman, B. G., Baker, J. E., & Williams, P. (1981). ELECTRICAL ACTIVATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER ANNEALING OF BF//2** plus IMPLANTED AMORPHIZED SILICON. In Proceedings - Electronic Components and Technology Conference (pp. 104-108). IEEE.