Abstract
The two-dimensional electron gas (2DEG) at the interface between insulating LaAlO3 and SrTiO3 is intriguing both as a fundamental science topic and for possible applications in electronics or sensors. For example, because the electrical conductance of the 2DEG at the LaAlO3/SrTiO3 interface can be tuned by applying an electric field, new electronic devices utilizing the 2DEG at the LaAlO3/SrTiO3 interface could be possible. For the implementation of field-effect devices utilizing the 2DEG, determining the on/off switching voltage for the devices and ensuring their stability are essential. However, the factors influencing the threshold voltage have not been extensively investigated. Here, we report the voltage-induced shift of the threshold voltage of Pt/LaAlO3/SrTiO3 heterostructures. A large negative voltage induces an irreversible positive shift in the threshold voltage. In fact, after the application of such a large negative voltage, the original threshold voltage cannot be recovered even by application of a large positive electric field. This irreversibility is attributed to the generation of deep traps near the LaAlO 3 /SrTiO 3 interface under the negative voltage. This finding could contribute to the implementation of nanoelectronic devices using the 2DEG at the LaAlO3/SrTiO3 interface.
Original language | English (US) |
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Article number | 8023 |
Pages (from-to) | 8023 |
Number of pages | 1 |
Journal | Scientific reports |
Volume | 5 |
DOIs | |
State | Published - Jan 2015 |
Externally published | Yes |
ASJC Scopus subject areas
- General