@inproceedings{d17246e3a9d9467398f0178b6238be34,
title = "Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress",
abstract = "The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.",
author = "Chang, {C. Y.} and Douglas, {E. A.} and J. Kim and L. Liu and Lo, {C. F.} and Chu, {B. H.} and Cheney, {D. J.} and Gila, {B. P.} and F. Ren and Via, {G. D.} and Cullen, {D. A.} and L. Zhou and David Smith and S. Jang and Pearton, {S. J.}",
year = "2011",
doi = "10.1149/1.3629957",
language = "English (US)",
isbn = "9781566779067",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "89--100",
booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",
edition = "6",
note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
}