Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

C. Y. Chang, E. A. Douglas, J. Kim, L. Liu, C. F. Lo, B. H. Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, D. A. Cullen, L. Zhou, David Smith, S. Jang, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages89-100
Number of pages12
Edition6
DOIs
StatePublished - 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress'. Together they form a unique fingerprint.

Cite this